PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
4″
400
P/P
0.001-0.005
SEMI Prime
p-type Si:B
[100]
4″
500
P/P
0.001-0.005
SEMI Prime, Wafers with striation marks
p-type Si:B
[100]
4″
525
P/P
0.001-0.005
SEMI Prime, TTV<5μm, Bow<15μm, Warp<30μm
p-type Si:B
[100]
4″
525
P/E
0.001-0.002
SEMI Prime, TTV<4μm
p-type Si:B
[100]
4″
525
P/E
0.001-0.005
SEMI Prime, TTV<5μm
p-type Si:B
[100]
4″
525
BROKEN
0.001-0.005
Broken wafer (shattered into many pieces)
p-type Si:B
[100]
4″
800
C/C
0.001-0.005
SEMI, With striation marks
p-type Si:B
[100]
4″
?
P/P
SEMI Test
p-type Si:B
[100]
4″
375
P/E
<0.0015 {0.00091-0.00099}
SEMI Prime, TTV<3μm
p-type Si:B
[111]
4″
350
P/E
2-3
Prime, NO Flats
p-type Si:B
[111]
4″
1000
P/P
1-10
SEMI Prime, Cassettes of 10 [...]
2019-03-05meta-author
Semiconductor lasers in the near-infrared band (760-1060nm) based on GaAs substrates are the most mature and most widely used, and have already been commercialized. We can supply GaAs laser diode wafer for a wavelength of 940nm. Moreover, a variety of laser wafers with different wavelengths [...]
2022-07-28meta-author
An electrolytic etching technique has been developed which can remove p‐type GaAs substrates from thin (2–10µ) n‐type layers of or . Sodium hydroxide is used as the electrolyte, and is sprayed continually over the etching surface to prevent the build‐up of “flakes” on the p‐type surface [...]
2019-12-23meta-author
Single crystal diamond for sale from PAM-XIAMEN is grown by chemical vapor deposition (CVD), which is a method of decomposing hydrogen and hydrocarbon gas into hydrocarbon active groups at high temperature, and depositing diamond on the substrate material under certain conditions. Theoretically, the method is [...]
2019-04-19meta-author
Ultra High Flux 2-D CdZnTe Monolithic Detector Arrays for X-Ray Imaging Applications
The performance of 2-D CdZnTe monolithic detector arrays designed for high flux X-ray imaging applications was studied. For the first time we have obtained 5 times 106 counts/s/mm2 count-rate for aCdZnTe pixelated detector array. This count-rate is more [...]
PAM XIAMEN offers 8″CZ Prime Silicon Wafer
8 inch prime silicon wafer
Orientation CZ <111>
Diameter 200mm
Thickness 1±0.025mm
Total Thickness Variation ≤25μm
Warp ≤50μm
Surface Sigle -side Polished
P type
Resistivity 1-80Ωcm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-10meta-author