PAM XIAMEN offers 6″CZ Prime Silicon Wafer-2
Si wafers
Orientation (100)
Dia 6” x thickness 500µm
Type n or p
1-20 ohm.cm
One side polished
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Si wafers
Orientation (100)
Dia 6” x thickness 500µm
Type n or p
1-20 ohm.cm
One side polished
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
At present, most InAs/GaSb ll superlattices are grown on lattice matched GaSb substrates. However, due to the high price of GaSb substrate, the absence of semi-insulating substrate, and the complexity of the process, seeking to grow GaSb bulk materials on new substrates, such as [...]
PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100-6°] 4″ 525 P/E 1-100 SEMI Prime p-type Si:B [100] 4″ 350 P/E 0.08-0.12 SEMI Prime, TTV<5μm p-type Si:B [100-4°] ±0.5° 4″ 381 P/E 0.01-0.02 SEMI Prime p-type Si:B [100] 4″ 800 P/EP 0.01-0.02 SEMI Prime p-type Si:B [100] 4″ 3100 P/P CZ 0.006-0.009 SEMI Prime, Individual cst p-type Si:B [100-6°] 4″ 525 P/E 0.0042-0.0047 SEMI Prime p-type Si:B [100] 4″ 150 ±15 P/P 0.001-0.005 SEMI Prime, TTV<2μm p-type Si:B [111-3°] 4″ 300 P/E 3-4 SEMI Prime p-type Si:B [111-3°] 4″ 400 P/E 0.015-0.018 SEMI Prime p-type Si:B [111] 4″ 525 P/E 0.005-0.006 SEMI Prime p-type Si:B [111-1.5°] 4″ 525 P/E 0.002-0.004 SEMI Prime p-type Si:B [111] 4″ 300 P/E 0.001-0.005 SEMI Prime n-type Si:P [110] ±0.5° 4″ 525 P/P 20-80 SEMI Prime @ [111] – Secondary 70.5° [...]
PAM-XIAMEN offer SiC substrate with Ag, Ti or Ni or Au metal layers with small chips: 1. Specifications of SiC Chip Substrate No 1. PAM200508-SIC-AU 10×10mm SiC substrate / Ti(0.1um)-Ni(0.1um)-Au(2um), n type. Grade: dummy Thickness: approx. 350um Backside surface: with metal films of Ti-Ni-Au Metal thickness: Ti(0.1um)-Ni(0.1um)-Au(2um), No 2. SiC Wafer with [...]
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [100] 2″ 200 P/P FZ 500-1,000 SEMI, , in hard ccassettes of 4, 5 & 5 wafers n-type Si:P [100] 2″ 500 P/P FZ >200 SEMI Prime, n-type Si:P [100] 2″ 225 P/P FZ >100 SEMI, , Individual cst, 1 very deep scratch n-type Si:P [100] 2″ 280 P/E FZ 60-90 SEMI Prime n-type Si:P [100] 2″ 150 P/P FZ 50-110 SEMI Prime, n-type Si:P [100] 2″ 280 P/P FZ 2-5 SEMI Prime n-type Si:P [111-3.5° towards[110]] ±0.5° 2″ 279 ±15 P/E FZ >2,000 SEMI Prime n-type Si:P [111] ±0.5° 2″ 280 P/P FZ 2,000-4,000 SEMI Prime, TTV<5μm, Both-sides Epi-Ready n-type Si:P [111] ±0.5° 2″ 280 P/P FZ 2,000-4,000 SEMI Prime, TTV<5μm n-type [...]
GaAs pn diodes with heavily carbon-doped p-type GaAs grown by MOMBE were fabricated. The I-V and C-V characteristics were not significantly affected by the hole concentration of the p-GaAs although a lattice mismatch at the junction generates misfit dislocations. A good I-V characteristic with [...]
The typical structure of InAs quantum dot (QD) layers on InP substrate is available with wavelength of 1.55um for QD photodetector. Quantum dot is called semiconductor nanocrystals (NCs), which refer to three-dimensional constrained nanomaterials with a radius smaller than or close to the exciton [...]
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