PAM XIAMEN offers PbWO4 single crystal substrate.
PbWO4 single crystal substrate ,random orientation, 5 x 3 x 0.45mm,Single side polished
PbWO4 single crystal substrate ,random orientation, 5 x 5 x 0.45mm,Single side polished
PbWO4 (001) single crystal substrate 10x10x0.5mm,2sp
PbWO4 single crystal substrate , [...]
2019-05-14메타 작성자
PAM-XIAMEN can offer 2” InGaAs/InP epi wafer for PIN as follows. InGaAs is the compound of InAs and GaAs. In the periodic table of chemical elements, In and Ga are elements of the third group, and As is the fifth group element. The properties of InGaAs [...]
PAM XIAMEN offers Indium Foil.
Indium ( In ) Foil: 100 mm (W) x 100 mm ( L) x 0.1 mm ( T)
Polycrystal In Foil
Purity: > 99.995%
Size: 0.10 mm thickness x 100mm width x 100 mm Length
Surface finish: as cold rolling [...]
2019-05-08메타 작성자
HEMTs evolved from Field Effect Transistors (FETs) are suitable for manufacturing monolithic microwave integrated circuits (MMICs).
HEMTs were initially generated to obtain high electron mobility in semiconductor devices at room temperature. The electron mobility of FETs is limited even with high doping levels, so high [...]
2022-07-25메타 작성자
PAM XIAMEN offers FZ Intrinsic undoped Silicon wafers.
Silicon wafers, per SEMI Prime, P/E 4″Ø×525±25μm,
FZ Intrinsic undoped Si:-[100]±0.5°, Ro=(5,000-10,000)Ohmcm,
One-side-polished, back-side Alkaline etched, SEMI Flat (one),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1,000μs.
For more information, please visit our website: https://www.powerwaywafer.com,
send [...]
2019-08-22메타 작성자
Super Low Stress Nitron on Silicon Wafers
PAM XIAMEN offers Super Low Stress Nitron on Silicon Wafers
When you need the thickest nitride Super Low Stress Nitride is the nitride to use.
We can deposit up to 4 micron of nitride using this method of nitride deposition.
SPECIFICATIONS
Thickness range: 50Å [...]
2019-02-11메타 작성자