Experimental conditions were investigated for growth of inclusion-free near-stoichiometric CdZnTe single crystals with a minimized concentration of native point defects. The positions of the stoichiometric line PS = 8×105exp (-1.76×104/T) (atm) and the room-temperature and high-temperature p-n lines were evaluated from high-temperature in situ [...]
2019-07-16meta-author
A 3-inch GaAs epitaxial wafer can be provided for making a PIN diode chip, which can make a power electronic device with high isolation and low insertion loss. A heterojunction AlGaAs/GaAs PIN wafer makes the diode with low RF on-state resistance suitable for fabricating various [...]
2021-11-02meta-author
Gallium oxide (Ga2O3) is a direct ultra wide bandgap semiconductor with a relatively complex structure. Ga2O3 has 5 isomers, namely α、β、γ、ε and δ. These five crystal phases can undergo phase transformation and mutual transformation under certain conditions, among which β- Ga2O3 is the most [...]
2019-04-19meta-author
PAM XIAMEN offers nitride coated silicon wafers.
Stoichiometric LPCVD Nitride on Silicon Wafer Specification
Thickness range: 100Å – 4500Å
Sides processed: Both
Refractive index: 2.00 +/-.05 @632nm
Film stress: >800MPa Tensile Stress
Wafer size: 1″ -12″inches
Temperature: 800C°
Gases: Dichlorosilane, Ammonia
Equipment: Horizontal vacuum furnace
Nitride
LPCVD
PECVD
[...]
2019-02-11meta-author
PAM XIAMEN offers 2″ Diameter Wafer-2″ wafers(111).
2″ Diameter Wafer
2″ wafers(111)
Ge <111> undoped
Ge Wafer . Undoped, 2″ dia x 0.5 mm, 1SP (111) R >50 ohm.cm
Ge Wafer . Undoped, 2″ dia x 0.5 mm, 2SP (111) R >50 Ohm.cm
Ge<111> [...]
2019-04-23meta-author
Highlights
•Nanoscale defects in III–V materials, grown over Si were characterized with CAFM.
•The defects exhibit higher conductivity.
•The contact rectifying feature is hide by a larger current under the reverse bias.
•Patterned samples fabricated using Aspect Ratio Trapping were also characterized.
Abstract
The implementation of high mobility devices requires [...]