PAM XIAMEN offers YIG single crystal substrate.
YIG single crystal substrate, one side polished, (111), 5 mm dia. x 0.5 mm
YIG single crystal substrate, two sides polished, (111), 5 mm dia. x 0.35 mm
Due to the rapid changes in the semiconductor wafer [...]
2019-05-21meta-author
Highlights
•AlGaN/GaN HEMT on SiC substrate is presented to improve the electrical operation.
•The depletion region of structure is amended using a multiple recessed gate.
•A gate structure is proposed to be able to control the thickness of the channel.
•RF parameters are considered and are improved.
In this [...]
III-nitrides are mainly composed of InN-GaN-AlN and its alloys, of which InGaN is the most important and widely used. InGaN is unstable and easy to decompose at high temperature. The separated phase InN can form small clusters with three-dimensional quantum confinement, which strengthens the [...]
2023-02-16meta-author
InGaN (Indium Gallium Nitride) epi-wafer with MQWs is provided, which is a light-emitting layer for fabricating blue or green LED. Indium gallium nitride is a mix material of gallium nitride and indium nitride and often grown on GaN buffer on sapphire, silicon or SiC substrate. Researches carried [...]
2020-07-14meta-author
PAM XIAMEN offers 4″FZ Prime Silicon Wafer.
Silicon wafers, per SEMI Prime, P/E 4″Ø×525±25μm,
FZ Intrinsic undoped Si:-[111]±0.5°, Ro > 10,000 Ohmcm,
TTV<5μm, Bow<20μm, Warp<30μm,
One-side-Epi-Ready-polished, back-side etched, SEMI Flats,
Sealed in Empak or equivalent cassette,
MCC Lifetime>1,000μs.
For more information, please visit our [...]
2019-07-05meta-author
Semi-insulating GaAs (gallium arsenide) crystal with low defects and dopants can be offered by PAM-XIAMEN, one of gallium arsenide producers. Semi-insulating GaAs crystal refers that there is excess arsenic during the GaAs crystal growth process, leading to crystallographic defects, which is arsenic antisite defects. [...]
2021-06-28meta-author