Silicon epitaxy with Boron dopant in size 200mm from PAM-XIAMEN is available for semiconductor device fabrication. Silicon epitaxy growth is a surface treatment process for silicon wafers, which means that a single crystal film is superimposed on the polished wafer by chemical reaction or other [...]
2021-06-08meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
3″
1500
P/E
5-7
SEMI Prime
n-type Si:P
[100]
3″
350
P/P
1-5
SEMI Prime
n-type Si:P
[100]
3″
350
P/P
1-25
SEMI Prime, TTV<1μm, Empak cst
n-type Si:P
[100] ±1°
3″
500
P/P
1-100
SEMI Prime, TTV<2μm, Empak cst
n-type Si:P
[100-4°] ±0.5°
3″
500
P/E
1-20
Prime
n-type Si:P
[100]
3″
650
P/P
1-10
Prime, TTV<2μm
n-type Si:P
[100]
3″
1000
P/P
1-5
SEMI Prime, hard cst
n-type Si:P
[100]
3″
1000
P/E
1-20
SEMI Prime
n-type Si:P
[100]
3″
6000
P/E
1-20
SEMI Prime, Individual cst
n-type Si:Sb
[100]
3″
300
P/E
0.02-0.04
SEMI Prime, in hard cassettes of 2 wafers
n-type Si:Sb
[100]
3″
381
P/E
0.008-0.020
SEMI Prime
n-type Si:As
[100]
3″
380
P/EOx
0.001-0.005
SEMI Prime, LTO Back-side seal [...]
2019-03-06meta-author
Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes
The spontaneous emission characteristics of green- and red-emitting InGaN quantum wells (QWs) on ternary InGaN substrate are analyzed, and the radiative recombination rates for the QWs grown on ternary substrate were compared with those of InGaN QWs on [...]
2014-04-02meta-author
PAM-XIAMEN offers 850nm laser diode wafer, which is a SLD (superluminescent diode) structure. It can be used as the light source of fiber optic gyroscope. Super-luminescent diode is a kind of semiconductor optoelectronic devices between laser diodes (LDs) and light-emitting diodes (LEDs). More detail [...]
2019-03-13meta-author
PAM-XIAMEN offers diamond on silicon wafer. Since diamond has a wide band gap, diamond thin films on silicon wafer, which is diamond epitaxial growth on silicon by MPCVD, is applied to wide band gap semiconductors, such as gas sensor devices, temperature sensor devices, radiation/infrared [...]
2019-04-19meta-author
PAM XIAMEN offers LSGM single crystal substrate.
Now LSGM (La 0.95 Sr 0.05 Ga 0.95 Mg 0.05 O 3-δ) single crystal substrate is commercially available from PAM XIAMEN by contract growth via CZ method. LSGM has the advantage of a broad electrolytic domain with [...]
2019-05-10meta-author