GaN 계 LED 에피 택셜 웨이퍼

제품 설명

The LED epitaxial wafer is a substrate heated to an appropriate temperature. The LED wafer material is the cornerstone of the technology development for the semiconductor lighting industry. Different substrate materials require different LED epitaxial wafer growth technology, chip processing technology and device packaging technology. The substrate for LED epi wafer determines the development route of semiconductor lighting technology. To achieve luminous efficiency, epitaxial wafer suppliers pay more attention to GaN based LED epitaxial wafer, since the epitaxial wafer price is in low cost, and the epi wafer defect density is small. LED epi wafer advantage on GaN substrate is the realization of high efficiency, large area, single lamp and high power, which make the process technology simplify and improve the large yield rate. The development prospects of the LED epi wafer market are optimistic.

1. LED Wafer List

As a LED epitaxial wafer manufacturer, PAM-XIAMEN can offer activated and unactivated GaN Epi LED wafer for LED and laser diodes (LD) application,such as For micro LED or ultra thin wafer or UV LED researches or LED manufacturers. LED epitaxial wafer on GaN is grown by MOCVD with PSS or flat sapphire for LCD back light, mobile, electronic or UV(ultraviolet), with blue or green or red emission, including InGaN/GaN active area and AlGaN layers with GaN well/AlGaN barrier for different chip sizes.

2. InGaN/질화 갈륨(gallium nitride) based LED Epitaxial Wafer

GaN으로 Al2O3-2에 "에피 웨이퍼 사양 (LED 에피 택셜 웨이퍼)

1. 성장 기술 - MOCVD
2.Wafer 직경 :이 50.8mm
3.Wafer substrate material: Patterned Sapphire Substrate(Al2O3) or Flat Sapphire
4.Wafer 패턴의 크기 : 3X2X1.5μm

3. Wafer structure:

4. Wafer parameters to make chips:

em	색	칩 크기	형질	외관
PAM1023A01	블루	10 밀 X 23mil			조명
			VF = 2.8 ~ 3.4V		LCD 백라이트
			포 = 18 ~ 25MW		모바일 기기
			WD = 450 ~ 460 ㎚		소비자 전자
PAM454501	블루	X 45mil 45mil	VF = 2.8 ~ 3.4V		일반 조명
			포 = 250 ~는 300mW		LCD 백라이트
			WD = 450 ~ 460 ㎚		야외 디스플레이

5. Application of LED epitaixal wafer: 

*If you need to know more detail information of Blue LED Epitaxial Wafer, please contact with our sales departments

조명
LCD 백라이트
모바일 기기
소비자 전자

6. Specification of LED Epi Wafer as an example:

Spec PAM190730-LED
– size : 4 inch
– WD : 455 ± 10nm
– brightness : > 90mcd
– VF : < 3.3V
– n-GaN Thickness : <4.1㎛
– u-GaN thickness : <2.2㎛
– substrate : patterned sapphire substrate (PSS)

7.GaAs(Gallium arsenide)based LED Wafer Material:

LED의 GaAs 웨이퍼에 관해서는, 이들이 MOCVD에 의해 성장되고, GaAs로 파장 LED 웨이퍼 아래 참조 :
레드 : 585nm 정격, 615nm, 620 ~ ~ 630㎚
Yellow:587 ~ 592nm
Yellow/Green: 568 ~ 573nm

8. Definition of LED Epitaxial Wafer:

What we offer is bare LED epi wafer or not processed wafer without lithography processes, n- and metals contacts, etc. And you can fabricate the LED chip using your fabrication equipment for different application such as nano optoelectronics research.

주목:
중국 정부는 갈륨 재료(GaAs, GaN, Ga2O3, GaP, InGaAs, GaSb 등)와 반도체 칩 제조에 사용되는 게르마늄 재료의 수출에 대한 새로운 제한을 발표했습니다. 2023년 8월 1일부터 이러한 자재의 수출은 중국 상무부로부터 허가를 받은 경우에만 허용됩니다. 여러분의 이해와 협력을 바랍니다!

웨이퍼 사양을 LED 이러한 세부 갈륨 비소를 참조하시기 바랍니다 :LED에 대한 갈륨 비소 에피 웨이퍼

UV는 웨이퍼 사양을 LED를 참조하시기 바랍니다 :UV LED 에피 웨이퍼  

 AlGaN UV LED Wafer

실리콘 사양에 LED 웨이퍼를 참조하시기 바랍니다 :실리콘에 LED 웨이퍼

블루의 GaN LD 웨이퍼 사양은 다음 페이지를 참조하세요 블루의 GaN LD 웨이퍼

For Violet GaN LD Wafer, please visit: 405nm GaN Laser Diode Wafer

GaN LED Epi on Sapphire

850nm and 940nm infrared LED wafer

850-880nm and 890-910nm Red Infrared AlGaAs /GaAs LED Epi-Wafer

630nm GaAs LED Wafer

GaN Wafers to Fabricate LED Devices

GaN LED Structure Epitaxy on Flat or PSS Sapphire Substrate

LED용 사파이어의 GaN 에피택셜 성장

Formation of V-Shaped Pits in Nitride Films Grown by Metalorganic Chemical Vapor Deposition

Si-based GaN PIN Photodetector Structure

For more foundry services, please visit: GaN Foundry Services for LED Fabrication