The development of SiC and GaN power semiconductor market
The current state of SiC technology and market, and the development trend in the next few years.
The SiC device market is promising. Sales of Schottky barrier diodes have matured and MOSFET shipments are expected to increase [...]
2018-11-14meta-author
PAM-PL01 series detectors are linear pixel electrode structured detector based on CZT crystal, they can counting X-ray and imaging.
1. Specification of CZT Photon Counting Linear Array Detector
Size
16 pixels
Detector crystal
CdZnTe
Crystal Density
5.8g/cm3
Volume resistivity
>1010Ω.cm
Dimension
16.5×4.4 mm2
Thickness
2.0 mm
Pixel array
16×1
Pixel size
0.9×2.0mm2
Electrode material
Au
Standard working voltage
-450V
Max. working voltage
600V
Single pixel leakage current
<0.1nA
Max. counting rate
>0.7Mcps/mm2
Operation temperature
25℃~35℃
Storage temperture
10℃~40℃
Storage [...]
2019-04-24meta-author
As a leading manufacturer of semiconductor materials, PAM-XIAMEN aims to supply high quality semiconductor wafers including substrate and epitaxy of SiC, GaN, GaAs and other materials, supporting scientists and engineers around the world to develop and innovate technology. Please view https://www.powerwaywafer.com/products.html for more wafers.
The list [...]
2022-08-26meta-author
PAM XIAMEN offers Silicon-Nitride on Corning 7980.
Silicon Nitride Film (LPCVD) on Corning 7980, Film thickness: 1.3um
Silicon Nitride Film (LPCVD) on Corning 7980, Film thickness: 1.3um ,10x10x0.5mm
Silicon Nitride Film (LPCVD) on Corning 7980, Film thickness: 1.3um ,10x5x0.5mm
For more information, please visit [...]
2019-04-29meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
4″
525
P/E
SEMI Prime
n-type Si:P
[100]
4″
525
P/E
7-11
SEMI Prime
n-type Si:P
[100]
4″
224
P/E
5-10
SEMI Flats (two), Cassette of 12 + 13 wafers
n-type Si:P
[100]
4″
224
BROKEN
5-10
SEMI Test
n-type Si:P
[100]
4″
500
P/P
4-6
SEMI Prime
n-type Si:P
[100]
4″
350 ±10
P/P
3-5
SEMI Prime
n-type Si:P
[100]
4″
350
P/P
3-5
SEMI Test, Haze, pits, scratches
n-type Si:P
[100]
4″
450
C/C
3-5
SEMI Prime
n-type Si:P
[100]
4″
525
P/P
3-9
SEMI Prime
n-type Si:P
[100]
4″
525
P/E
3-9
SEMI Prime
n-type Si:P
[100]
4″
525
P/E
3-9
SEMI Prime, TTV<5μm
n-type Si:P
[100]
4″
500 ±10
P/P
2-5
SEMI TEST (wafers have spots resembling water splashes, [...]
2019-03-05meta-author
Polarization degree and vector angle effects on a CdZnTe focal plane performance
To date in astrophysics, X- and gamma-ray source emissions have been studied almost exclusively through spectral and timing variability analysis. However, this analysis often allows two or more distinct models capable of explaining [...]