뉴스

기체상 도핑된 FZ 실리콘의 방사형 저항 변화

The FZ (float zone) gas-phase doped silicon single crystal with high purity, few defects, low compensation, and low oxygen and carbon content can be supplied by PAM-XIAMEN. It is widely used in various high-sensitivity detectors and low-loss microwave devices. To get more specifications of FZ silicon, please refer to [...]

광검출기 및 광혼합기를 위한 LT GaAs 박막

Low temperature grown (LTG) gallium arsenide (GaAs) thin-film on GaAs substrate is available for photodetctors and photomixers. In addition, we can supply gaas epi wafer, for more GaAs thin film wafer please view https://www.powerwaywafer.com/gaas-wafers/gaas-epiwafer.html. LTG-GaAs is GaAs grown at a low temperature of 250-300 degrees Celsius using MBE. LT-GaAs [...]

PL(광발광)이란 무엇입니까?

PAM-XIAMEN can supply semiconductor wafers, more wafer specifications please refer to https://www.powerwaywafer.com/products.html. If necessary, we will offer PL (photoluminescence) spectroscopy for the semiconductor wafers. 1. What is PL? About PL, it refers to the self-emission light produced by a material after being excited by light. When a substance absorbs photons and [...]

무엇이 SiC 웨이퍼 슬라이싱의 품질에 영향을 미칩니까?

Silicon carbide (SiC) wafer are available, for more wafer information please click https://www.powerwaywafer.com/sic-wafer. The performance of SiC wafer slicing determines the processing level of subsequent thinning and polishing. Slicing is prone to cracks on the surface and subsurface of the SiC wafer, increasing the fragmentation rate and manufacturing cost [...]

Si 기반 GaN PIN 광검출기 구조

III-nitrides are suitable for working in extreme conditions due to their excellent radiation hardness and high temperature properties. Therein, the fabrication of various types of GaN-based photodetectors (PDs) has been reported over the past decade. In addition, the high conductivity of silicon substrate has drawn attention to the construction [...]

940nm 레이저 다이오드 웨이퍼

Semiconductor lasers in the near-infrared band (760-1060nm) based on GaAs substrates are the most mature and most widely used, and have already been commercialized. We can supply GaAs laser diode wafer for a wavelength of 940nm. Moreover, a variety of laser wafers with different wavelengths can be offered, more please [...]

탄화규소(SiC) 칩은 어떻게 만들어집니까?

How is silicon carbide (SiC) chip made? Generally speaking, chips are semi-finished products that have been cut from wafers. PAM-XIAMEN can offer SiC wafers for making chips, more specifications please refer to https://www.powerwaywafer.com/sic-wafer. Each wafer integrates hundreds of chips, and each chip consists of thousands of cells. So, how [...]

HEMT 및 pHEMT 기술이란 무엇입니까?

HEMTs evolved from Field Effect Transistors (FETs) are suitable for manufacturing monolithic microwave integrated circuits (MMICs). HEMTs were initially generated to obtain high electron mobility in semiconductor devices at room temperature. The electron mobility of FETs is limited even with high doping levels, so high electron mobility obtained with AlxGa1-xAs/GaAs [...]

InP HEMT 에피 웨이퍼

InP-based three-terminal electronic devices mainly include InP-based heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs). PAM-XIAMEN can provide indium phosphide (InP) HEMT epi wafer, in which InGaAs use as the channel material and InAlAs as the barrier layer. The InP HEMT structure grown with InAlAs/InGaAs material system [...]