Ultra High Flux 2-D CdZnTe Monolithic Detector Arrays for X-Ray Imaging Applications The performance of 2-D CdZnTe monolithic detector arrays designed for high flux X-ray imaging applications was studied. For the first time we have obtained 5 times 106 counts/s/mm2 count-rate for aCdZnTe pixelated detector array. This count-rate is more than twice the highest count-rate [...]
InGaN/GaN/AlGaN-based laser diodes grown on free-standing GaN substrates The InGaN multi-quantum-well (MQW)-structure laser diode (LD) was grown on an epitaxially laterally overgrown GaN on sapphire. The lowest threshold current densities between 1.2 and 2.8 kA cm−2 were obtained when the number of InGaN well layer was 2. The LDs showed an [...]
Polarization degree and vector angle effects on a CdZnTe focal plane performance To date in astrophysics, X- and gamma-ray source emissions have been studied almost exclusively through spectral and timing variability analysis. However, this analysis often allows two or more distinct models capable of explaining the same observations of a [...]
Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes The spontaneous emission characteristics of green- and red-emitting InGaN quantum wells (QWs) on ternary InGaN substrate are analyzed, and the radiative recombination rates for the QWs grown on ternary substrate were compared with those of InGaN QWs on GaN templates. For green- and [...]
Size and distribution of Te inclusions in detector-grade CdZnTe ingots To observe the Te inclusions distribution along the axial direction of CdZnTe ingots, batches of as-grown detector-grade CdZnTe crystals grown by vertical Bridgman method, were investigated using IR transmission imaging. However, there is not a rigorous regularity for the micron-scale [...]
Effect of Mn on the low temperature growth of GaAs and GaMnAs With the combined use of reflection high energy electron diffraction (RHEED) and scanning tunneling microscope, the growing surfaces of GaAs and GaMnAs were investigated. At the start of GaAs growth at low temperature ∼250°C, RHEED oscillation indicated larger [...]
A phenomenon of LT-GaAs photoconductive switch triggered by 800nm femtosecond laser The Ti oxide is used as insulator between the electrodes to substitute the air gap of photoconductive semiconductive switch (PCSS). The width of the oxide is smaller than 100nm, the electrodes and substrate’s materials are Ti and LT-GaAs respectively. The simulation [...]
X-ray response of polycrystalline – CdZnTe X-ray response of polycrystalline-CdZnTe deposited by thermal evaporation were measured by signal to noise(S/N) analysis. The CdZnTe material has optimal property adquem in solid state X-ray detector and many research presented on single crystal CdZnTe with small sized silicon readout device, but it would [...]
Characterization of LT GaAs carrier lifetime in multilayer GaAs epitaxial wafers by the transient reflectivity technique A methodology for determining the carrier lifetime of LT GaAs buffer layers in GaAs multilayer wafers utilizing the femtosecond transient reflectivity technique is introduced. Experimental results and computer simulations performed as a function of the LT GaAs growth temperature are presented for [...]
Precipitation in low temperature grown GaAs The precipitation of arsenic in GaAs epitaxially grown at low temperature (LT GaAs) has been studied as a function of the post-growth annealing temperature by three independent methods: transmission electron microscopy (TEM), Raman scattering, and for the first time the anomalous small angle X-ray [...]
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