High quality polycrystalline CdZnTe films were prepared by aluminum induced crystallization (AIC) and radio frequency (r.f.) magnetron sputtering. The crystallinity, morphology and optical property of both as-deposited and AIC samples were investigated by X-ray diffraction (XRD), and atomic force microscopy (AFM), as well as Raman and ultraviolet–visible spectrometry. The results of [...]
When the In composition in the InGaAs material reaches 0.53, and Ga reaches 0.47, InGaAs / InP lattice matched makes it can form a heterojunction. The InGaAs / InP heterojunction structure utilizes the steps of the conduction band and valence band formed by the difference in the band gap [...]
The objective of this work is to analyze the effects of argon ion irradiation process on the structure and distribution of Te inclusions in Cd1-xZnxTe crystals. The samples were treated with different ion fluences ranging from 2 to 8 × 1017 cm−2. The state of the samples before and after irradiation were studied [...]
HgCdTe thin films have been deposited on CdZnTe/Si(1 1 1) substrates by pulsed laser deposition (PLD). A Nd:YAG pulsed laser with a wavelength of 1064 nm was used as laser source. The effects of CdZnTe buffer layer thickness which varied with the deposition time in the range from 3 to 15 min on the [...]
This paper investigates the hydrogen plasma treatment effects on the interface of Au/CdZnTe contact. Hydrogen plasma with high energy is the smallest and lightest atomic mass, which is easy to enter into the crystal surface to fill the vacancy defects. The Au/CdZnTe samples were treated by the microwave hydrogen plasma [...]
Distribution of defects and impurities in gallium arsenide wafers after surface gettering Gettering of defects and impurities in GaAs using a heat treatment (HT) of the yttrium-coated wafers has been investigated. The gettering has been established to be of a volume character. That has allows high-resistivity material to be obtained [...]
A fracture criterion for gallium arsenide wafers The fracture of single crystal gallium arsenide (GaAs) semi-conducting wafers was studied. Prismatic beam specimens, cut at different crystallographic orientations from thin wafers, were loaded to failure in four-point bending. Fracture in these crystals occurred predominantly on the {110} family of crystallographic planes. [...]
Thanks to GaAs tunnel junction technology, we offer epi wafers of single-junction and dual-junction InGaP / GaAs solar cells, with different structures of epitaxial layers (AlGaAs, InGaP) grown on GaAs for solar cell application. And now we offer GaAs epi wafer with InGaP tunnel junction as follows: 1. InGaP / GaAs Solar [...]
A process model of wafer thinning by diamond grinding This paper is to develop and investigate a wafer thinning process model (WTPM) to integrate the wafer thickness into set-up parameters and predict total thickness variation (TTV) of ground wafers with modification of the wafer grinding process model (WGPM) developed previously. [...]
Photoluminescence-based material quality diagnostics in the manufacturing of CdZnTe ionizing radiation sensors A photoluminescence method was used for characterization of crystalline perfection of CdZnTe single crystals in the different stages of an up-to-date process of ionizing radiation sensor production. It was shown that the point method is an effective tool [...]
| Cookie | Duration | Description |
|---|---|---|
| cookielawinfo-checkbox-analytics | 11 months | This cookie is set by GDPR Cookie Consent plugin. The cookie is used to store the user consent for the cookies in the category "Analytics". |
| cookielawinfo-checkbox-functional | 11 months | The cookie is set by GDPR cookie consent to record the user consent for the cookies in the category "Functional". |
| cookielawinfo-checkbox-necessary | 11 months | This cookie is set by GDPR Cookie Consent plugin. The cookies is used to store the user consent for the cookies in the category "Necessary". |
| cookielawinfo-checkbox-others | 11 months | This cookie is set by GDPR Cookie Consent plugin. The cookie is used to store the user consent for the cookies in the category "Other. |
| cookielawinfo-checkbox-performance | 11 months | This cookie is set by GDPR Cookie Consent plugin. The cookie is used to store the user consent for the cookies in the category "Performance". |
| viewed_cookie_policy | 11 months | The cookie is set by the GDPR Cookie Consent plugin and is used to store whether or not user has consented to the use of cookies. It does not store any personal data. |
