Semiconductor silicon carbide (4H SiC) has excellent properties such as wide bandgap, high breakdown field strength, high electron mobility, high thermal conductivity, and good chemical stability. It has demonstrated important application potential in fields such as power electronics, radio frequency microwave, and quantum information. The 4H-SiC substrate is the [...]
PAM-XIAMEN can supply SiC seed crystal for single crystal growth, specific parameters can be found in: https://www.powerwaywafer.com/sic-seed-crystal.html Seed crystals have a significant influence on the initial nucleation of crystals. The surface morphology of the crystal nucleation stage can to some extent reflect the rich information of crystal growth mechanism and crystal defect distribution, and [...]
With the driving force of Automotive and Industrial electronics, the strong growth of the silicon carbide (SiC) power semiconductor market is expected to approach $10 billion in the coming years. At the same time, many industry participants have announced corresponding expansion plans to quickly seize market share. The cooperation and integration [...]
Aluminum nitride (AlN) is a widely used III-V group nitride with a hexagonal wurtzite structure in the field of acoustic electronic devices. It has a large direct bandgap (bandgap of 6.2 eV), is compatible with CMOS technology, and has high thermal conductivity. In addition, aluminum nitride thin films have [...]
PAM-XIAMEN can supply SiC substrates with various specifications, please get more info from: https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html 1. Significance of Research on Correlation Between Defect Rate and Mechanical Strength It is well known that SiC defects have great negative impact to the electrical reliability and performance of chips; Their impact on the mechanical yield [...]
Silicon wafers can be supplied with specifications as found in: https://www.powerwaywafer.com/silicon-wafer Silicon is a semiconductor material, and its resistivity is closely related to the doping concentration. Doping is that introducing a small amount of impurities into silicon crystals to alter their electrical properties. According to the requirements of conductivity type and [...]
The minority carrier lifetime, also known as the average lifetime of non-equilibrium minority carriers, reflects the decay rate of minority carriers in semiconductor materials. It can directly reflect the quality of semiconductor materials and the performance of high-voltage high-power devices. Take the SiC bipolar power devices (eg. IGBT, PIN diode) [...]
PAM-XIAMEN can supply single crystal AlN substrate, additional sepcifications please see: https://www.powerwaywafer.com/aln-substrate.html. The AlN (aluminum nitride) crystal structure has hexagonal wurtzite (α- Phase) and cubic sphalerite (β- phase), and the hexagonal wurtzite structure is a stable structure, as shown in Fig. 1. AlN belongs to direct bandgap electronic semiconductors with a bandgap [...]
PAM-XIAMEN can supply AlN on Sapphire wafers, more specifications you can find in: https://www.powerwaywafer.com/aln-single-crystal-substrate-template-4.html At present, metal organic chemical vapor deposition (MOCVD) is considered one of the most widely used epitaxial techniques for AlN, but it always faces problems such as long growth cycles, high costs, and low substrate selection [...]
SiC wafers are available for power electronics, scientific or industrial applications, specifications as: https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html SiC is a binary compound formed in a 1:1 ratio of Si and C elements, consisting of 50% silicon (Si) and 50% carbon (C). Its basic structural unit is the Si-C tetrahedron. 1. SiC Crystal Structure Arrangement 1.1 [...]
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