GaSb 및 웨이퍼

제품 설명

PAM-XIAMEN offers Compound Semiconductor GaSb wafer – 갈륨 안티몬 grown by LEC(Liquid Encapsulated Czochralski), which can reduce the defects of gallium antimonide. The GaSb wafer is epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111) or (100).

Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a lattice constant of about 0.61 nm. GaSb wafers can be used for Infrared detectors,infrared LEDs and lasers and transistors, and thermophotovoltaic systems.

Here is the detail specification of wafer:

오리엔테이션 : (100) ± 0.5 °
두께 (μm) : 500 ± 25; 600 ± 25
타입 / 도펀트 : P / 언 도핑; P / Si; P / Zn
Nc (cm-3) :( 1 ~ 2) E17
기동성 (cm2 / V · s) : 600 ~ 700
성장 방법 : CZ
폴란드어 : SSP

2) 2 ″ (50.8mm) GaSb 웨이퍼
오리엔테이션 : (100) ± 0.5 °
두께 (μm) : 500 ± 25; 600 ± 25
타입 / 도펀트 : N / 언 도핑; P / Te
Nc (cm-3) :( 1 ~ 5) E17
기동성 (cm2 / V · s) : 2500 ~ 3500
성장 방법 : LEC
폴란드어 : SSP

3) 2 ″ (50.8mm) GaSb 웨이퍼
오리엔테이션 : (111) A ± 0.5 °
두께 (μm) : 500 ± 25
유형 / 도펀트 : N / Te; P / Zn
Nc (cm-3) :( 1 ~ 5) E17
기동성 (cm2 / V · s) : 2500 ~ 3500; 200 ~ 500
성장 방법 : LEC
폴란드어 : SSP

4) 2 ″ (50.8mm) GaSb 웨이퍼
오리엔테이션 : (111) B ± 0.5 °
두께 (μm) : 500 ± 25; 450 ± 25
유형 / 도펀트 : N / Te; P / Zn
Nc (cm-3) :( 1 ~ 5) E17
기동성 (cm2 / V · s) : 2500 ~ 3500; 200 ~ 500
성장 방법 : LEC
폴란드어 : SSP

5) 2 ″ (50.8mm) GaSb 웨이퍼
오리엔테이션 : (111) B 2deg.off
두께 (μm) : 500 ± 25
유형 / 도펀트 : N / Te; P / Zn
Nc (cm-3) :( 1 ~ 5) E17
기동성 (cm2 / V · s) : 2500 ~ 3500; 200 ~ 500
성장 방법 : LEC
폴란드어 : SSP

상대 제품 :
의 InAs 웨이퍼
InSb를 웨이퍼
InP의 웨이퍼
갈륨 비소 웨이퍼
GaSb 및 웨이퍼
갭 웨이퍼

갈륨 안티몬화물 (GaSb)은 절단, 에칭 또는 광택 마감 처리 된 웨이퍼로 공급할 수 있으며 광범위한 캐리어 농도, 직경 및 두께로 제공됩니다.

GaSb material presents interesting gallium antimonide properties for single junction thermophotovoltaic (TPV) devices. GaSb: Te single crystal grown with Czochralski (Cz) or modified Czo- chralski (Mo-Cz) methods are presented and the problem of Te homogeneity discussed. As the carrier mobility is one of the key points for the gallium antimonide crystals, Hall measurements are carried out. We present here some complementary developments based on the material processing point of view: the bulk gallium antimonide crystal growth, the gallium antimonide wafer preparation, and the gallium antimonide wafer etching. Subsequent steps after these are related to the p / no r n/p junction elaboration. Some results obtained for different thin-layer elaboration approaches are presented. So from the simple vapor phase diffusion process or the liquid phase epitaxy process up to the metal organic chemical vapor deposition process, we report some material specificity.

We also offer gallium antimonide wafer epi service, take below as an example:

2”크기 GaSb 에피 웨이퍼 :
Epi layer: Thikness 0.5 um, undoped/p type GaSb epi layer (undoped InP epi layer also available),
Substrate:2” semi-insulating GaAs