SiC epitaxial wafer is available for fabricating MOSFET devices, wafer specifications can be found in https://www.powerwaywafer.com/sic-mosfet-structure.html
1. Epitaxial Pits
Epitaxial pits, as one of the most common surface morphology defects, have a typical surface morphology and structural profile as shown in Fig.1. The position of thread [...]
2024-03-21메타 작성자
PAM XIAMEN offers 6″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:As
[100]
6″
675
OxP/EOx
0.001-0.005
SEMI TEST (spots & minor visual defects), 1Flat (57.5mm), Thermal Oxide 0.1μm±5% thick
p-type Si:B
[100]
6″
735
P/P
FZ >50
Prime, TTV<2μm
p-type Si:B
[100]
6″
650
P/P
FZ 8-13
SEMI Prime (57.5mm)
n-type Si:P
[100]
6″
475
P/P
FZ 60-75
SEMI Prime, MCC Lifetime>14,980μs, Lasermark
n-type Si:P
[112-5° towards[11-1]] ±0.5°
6″
800 ±10
P/P
FZ >3,000
SEMI, 1 JEIDA Flat (47.5mm), TTV<4μm, Lifetime>1,000μs
n-type Si:P
[112-5° towards[11-1]] ±0.5°
6″
950 ±10
P/P
FZ >3,000
SEMI, 1 JEIDA Flat (47.5mm), TTV<4μm, Lifetime>1,000μs
Intrinsic Si:-
[100]
6″
675
P/P
FZ >10,000
SEMI Prime (57.5mm)
Intrinsic Si:-
[100]
6″
675
P/P
FZ >10,000
SEMI [...]
2019-03-04메타 작성자
The quasi-steady state photo conductance technique is employed to probe effective minority carrier lifetime (τ eff) modifications after integrating silver nanoparticles (Ag NPs) on n-type and p-type silicon wafers with a native oxide surface. Our observations reveal that τ eff modification is very sensitive [...]
2018-11-21메타 작성자
PAM XIAMEN offers 4″FZ Prime Silicon Wafer-9
4″ Silicon Wafer
Orientation (100)
Thickness 525±25μm
SSP
P type, Boron doped
Resistivity>200Ωcm
Roughness<8 Angstrom
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-11메타 작성자
PAM XIAMEN offers 2″ Silicon Wafer.
Diameter
(mm)
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
50.8
N
Phos
FZ
(111) Off 2″ Towards (110)
2k-5k
350-400
P/E
PRIME
50.8
N
Phos
CZ
-100
1-20
10-30
P/P
PRIME
50.8
N
Phos
CZ
-100
1-20
40-60
P/P
PRIME
50.8
N
Phos
CZ
-100
1-20
80-100
P/P
PRIME
50.8
N
Phos
CZ
-100
1-20
140-160
P/P
PRIME
50.8
N
Phos
FZ
-100
>1000
200-500
P/E
PRIME
50.8
N
Phos
FZ
-100
>1000
200-500
P/P
PRIME
50.8
N
Phos
CZ
-100
225-275
P/P
PRIME
50.8
N
Phos
FZ
-100
>3000
225-275
P/P
PRIME
50.8
N
As
CZ
-100
.001-.005
250-300
P/E
PRIME
50.8
N
Sb
CZ
-100
.005-.02
250-300
P/P
PRIME
50.8
N
Phos
FZ
-100
>3000
250-300
P/E
PRIME
50.8
N
Phos
CZ
-100
1-20
250-300
P/E
PRIME
50.8
N
Phos
CZ
-100
1-20
250-300
P/E/DTOx
PRIME
50.8
N
Phos
CZ
-100
1-20
250-300
P/E/Ni
PRIME
50.8
N
Phos
CZ
-100
1-20
250-300
P/E/WTOx
50.8
N
Phos
FZ
-100
2000-5000
275-325
P/P
PRIME
50.8
N
Phos
CZ
-100
450-500
P/P
PRIME
50.8
N
Phos
CZ
-100
43485
500-550
P/E
PRIME
50.8
N
Phos
CZ
-100
1000-1050
P/E
PRIME
50.8
N
Phos
CZ
-100
1-20
2900-3100
P/E
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.
PAM-XIAMEN develops advanced crystal [...]
2019-02-27메타 작성자
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111]
2″
300
P/P
FZ >150
SEMI Prime
n-type Si:P
[111]
2″
500
P/P
FZ 130-150
SEMI Prime
n-type Si:P
[111]
2″
300
P/P
FZ 125-210
SEMI Prime
n-type Si:P
[111]
2″
380
P/E
FZ 100-300
SEMI Prime
n-type Si:P
[111]
2″
450
P/P
FZ 100-230
Prime, NO Flats
n-type Si:P
[111] ±0.5°
2″
280
P/E
FZ NTD 80-100
SEMI Prime, in hard cst {as ingot to process}
n-type Si:P
[111]
2″
300
P/P
FZ 70-95
SEMI Prime
n-type Si:P
[111-1°]
2″
300
P/E
FZ 69-77
SEMI Prime
n-type Si:P
[111]
2″
300
P/P
FZ >60
SEMI Prime
n-type Si:P
[111]
2″
300
P/E
FZ 60-90
SEMI Prime
n-type Si:P
[111] ±0.5°
2″
280
P/E
FZ NTD 55-75
SEMI Prime, in hard cst {as ingot [...]
2019-03-07메타 작성자