PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade.
Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and [...]
2019-05-20메타 작성자
PAM XIAMEN offers Single-emitter LD Chip 755nm @8W.
Brand: PAM-XIAMEN
Wavelength: 755nm
Stripe width: 350um
Output Power: 8W
Cavity Length:2.5mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd [...]
2019-05-09메타 작성자
Highlights
•Nanoscale defects in III–V materials, grown over Si were characterized with CAFM.
•The defects exhibit higher conductivity.
•The contact rectifying feature is hide by a larger current under the reverse bias.
•Patterned samples fabricated using Aspect Ratio Trapping were also characterized.
Abstract
The implementation of high mobility devices requires [...]
FZ Silicon Ignot Diameter 80+1mm-1
PAM XIAMEN offers FZ Silicon Ignot Diameter 80+1mm.
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more [...]
2019-07-03메타 작성자
Due to its excellent electrical, thermal, and radiation resistance, silicon carbide has become a potential material for applications in high-frequency, high-power, and strong radiation environments. MOS capacitors are an important means of studying semiconductor surfaces and interfaces, as well as the basic structure of [...]
2023-03-17메타 작성자
CdZnTe 이온화 방사선 센서 제조 시 광발광 기반 재료 품질 진단 이온화 방사선 센서 생산의 최신 공정의 여러 단계에서 CdZnTe 단결정의 결정질 완벽성을 특성화하기 위해 광발광 방법이 사용되었습니다. 요점은 [...]