Figure 1. A full InGaN structure grown on InGaN-on-sapphire (InGaNOS) substrates can span the spectrum from blue to amber. (Source: Soitec)
Figure 1. A full InGaN structure grown on InGaN-on-sapphire (InGaNOS) substrates can span the spectrum from blue to amber. (Source: Soitec)
GaAs(111) crystal wafer PAM XIAMEN offers n type/Si doped, undoped, and p type GaAs(111) crystal wafer: 1.Wafer List GaAs ,Growing Method: VGF (111)A , SI, undoped, 2″ dia x 0.5 mm, 1 sp GaAs ,Growing Method: VGF (111)A , SI, undoped, 4″ dia x 0.55 mm, 1 [...]
PAM XIAMEN offers Single Crystals, Wafers and Crystal Substrates. PAM XIAMEN provides both standard and customized high quality single crystals, wafers and substrates for a wide range of applications such as LED, ferroelectric, piezoelectric, electro-optical, photonics, high power electronics, and high frequency power devices, just to name [...]
PAM XIAMEN offers6″ FZ Silicon Wafer-5 Silicon wafers, per SEMI Prime, P/E 6″Ø×875±25µm, FZ p-type Si:B[111]±0.5°, Ro > 10,000 Ohmcm, Warp<60μm, One-side-polished, Particles: ≤10@≥0.3μm, MCL (Na, Al, K, Fe, Ni, Cu, Zn)<5E10/cm²,back-side etched, Tarnish, orange peel, contamination, haze, micro scratch, chips, edge chips, crack, crow feet, pin hole, pits, dent, waviness, smudge&scar on [...]
PAM XIAMEN offers 2″ FZ Prime Silicon Wafer. Si wafer Dia 2” x 260μm FZ (111) Type n doped P R > 300 ohm.cm 2 side spolished With flats For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com [...]
PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:As [111-4°] ±0.5° 4″ 325 P/E 0.001-0.005 SEMI Prime, Back Surface: Sand blasted with LTO seal n-type Si:As [111-4°] ±0.5° 4″ 300 P/E 0.001-0.005 SEMI Prime, Back-side Sand-blasted with LTO seal, in Empak cassettes of 7 wafers n-type Si:As [111-2°] ±0.5° 4″ 400 P/EOx 0.001-0.004 {0.0018-0.0036} SEMI Prime, Epi edges, 0.5μm LTO n-type Si:As [111-4°] ±0.5° 4″ 525 P/E 0.001-0.005 SEMI Prime n-type Si:As [111-4°] 4″ 525 P/E 0.001-0.005 SEMI Prime n-type Si:As [111] ±0.5° 4″ 1000 P/E 0.001-0.005 {0.0031-0.0040} SEMI Prime, TTV<4μm, [...]
Undoped InP Wafer PAM-XIAMEN offer low doped InP wafer substrate, see the following: InP wafer,2” (PAM-190507-INP) Diameter – 50.8±0.5 mm; Thickness – 350±25 µm; N type, low doped Dopant – low doped Orientation – (100)±0.5° Flat orientation – SEMI-E/J; Major flat orientation – (0-1-1) ±0.5° Major flat length – 16.0±1.0 mm; [...]
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