PAM-XIAMEN, a wafer substrate supplier, offers epi ready substrate wafer as follows:
Wikipedia:
Substrate is a solid (usually planar) substance onto which a layer of another substance is applied, and to which that second substance adheres. In solid-state electronics, this term refers to a thin slice [...]
2018-02-12메타 작성자
PAM XIAMEN offers LiNbO3 Lithium Niobate Crystal.
Lithium niobate is a ferroelectric material with excellent electro-optic, nonlinear, and piezoelectric properties. Lithium niobate crystals are important materials for optical waveguides, mobile phones, piezoelectric sensors, optical modulators and various other linear and non-linear optical applications. Find lithium niobate [...]
2019-03-13메타 작성자
Product Specifications
PAM XIAMEN offers Freestanding GaN Substrate
2″GaN Free-standing Substrate
Item
PAM-FS-GaN50-N
PAM-FS-GaN50-SI
Conduction Type
N-type
Semi-insulating
Size
2″(50.8)+/-1mm
Thickness
260+/-20um
Orientation
C-axis(0001)+/-0.5°
Primary Flat Location
(1-100)+/-0.5°
Primary Flat Length
16+/-1mm
Secondary Flat Location
(11-20)+/-3°
Secondary Flat Length
8+/-1mm
Resistivity(300K)
<0.5Ω·cm
>10^6Ω·cm
Dislocation Density
<5×10^6cm-2
Marco Defect Density
A grade<=2cm-2 B grade>2cm-2
TTV
<=15um
BOW
<=20um
Surface Finish
Front Surface:Ra<0.2nm.Epi-ready polished
Back Surface:1.Fine ground
2.Rough grinded
≥ 90 %
Usable Area
1.5″GaN Free-standing Substrate
Item
PAM-FS-GaN50-N
PAM-FS-GaN50-SI
Conduction Type
N-type
Semi-insulating
Size
1.5″(38.1)+/-0.5mm
Thickness
260+/-20um
Orientation
C-axis(0001)+/-0.5°
Primary Flat Location
(1-100)+/-0.5°
Primary Flat Length
12+/-1mm
Secondary Flat Location
(11-20)+/-3°
Secondary Flat Length
6+/-1mm
Resistivity(300K)
<0.5Ω·cm
>10^6Ω·cm
Dislocation [...]
2019-03-15메타 작성자
The carrier concentration and thickness of n-type GaAs epitaxial layers were obtained by cell voltage measurements in anodization, and the results are compared with those obtained by differential C-V measurements. The carrier concentrations in the epi-layer are within the order of those obtained by [...]
2019-06-13메타 작성자
Lithium niobate (LiNbO3) wafer has excellent electro-optic, nonlinear and piezoelectric properties. With the advanced micro- and nanofabrication techniques, integrated photonics devices based on lithium niobate on insulator (LNOI) thin films have been extensively studied. In the future, high-performance LiNbO3 thin film prepared will support [...]
2020-03-10메타 작성자
Fabry-Perot laser (FP-LD) is the most common semiconductor laser. At present, the fabrication technology of FP-LD used in optical fiber communication has been quite mature, and the structure of double heterojunction multiple quantum wells active layer, carrier and light limited structure is widely used. [...]
2023-01-13메타 작성자
