PAM XIAMEN offers LSGM single crystal substrate.
Now LSGM (La 0.95 Sr 0.05 Ga 0.95 Mg 0.05 O 3-δ) single crystal substrate is commercially available from PAM XIAMEN by contract growth via CZ method. LSGM has the advantage of a broad electrolytic domain with [...]
2019-05-10meta-author
Abstract
A 16-channel front-end readout application-specific integrated circuit (ASIC) with linearity enhancement design for cadmium zinc telluride (CdZnTe) detectors is presented in this paper. The resistors in the slow shaper are realized using a high-Z circuit to obtain constant resistance value instead of using only [...]
2017-10-30meta-author
We have investigated the photoluminescence mapping characteristics of semi-insulating (SI) InP wafers obtained by annealing in iron phosphide ambience (FeP2-annealed). Compared with as-grown Fe-doped and undoped SI InP wafers prepared by annealing in pure phosphorus vapour (P-annealed), the FeP2-annealed SI InP wafer has been [...]
2019-11-11meta-author
Slicing, cleaning and kerf analysis of germanium wafers machined by wire electrical discharge machining
This paper investigates the slicing of germanium wafers from single crystal, gallium-doped ingots using wire electrical discharge machining. Wafers with a thickness of 350 μm and a diameter of 66 mm were cut [...]
PAM-XIAMEN offers 2inch or 4inch red infrared AlGaAs / GaAs LED epi wafer with wavelength 850-880 nm and 890-910nm:
1. Red Infrared AlGaAs / GaAs LED Epi Wafer
PAM-190723-LED
Structure
Thickness, um
Type
Composition
CC, cm-3
Wide-gap window
1
р
AlхGa1-хAs (х=0,25-0,3)
(2-5) ∙1018
Barrier layer
0.06
р
AlхGa1-хAs (х=0,25-0,3)
(0.8-1) ∙1018
Active layer
–
GaAs
undoped
–
Al0,2Ga0,8As
Barrier layer
0.06
n
AlхGa1-хAs (х=0,25-0,3)
(0.5-1) ∙1017
Wide-gap window
6
n
AlхGa1-хAs
(1-2)∙1018
(х=0,3-0,35)
Stop layer
0.1
–
AlхGa1-хAs
–
(х=0,9-1)
Buffer layer
–
n
GaAs
–
Substrate
–
n+
GaAs
–
2. Where is the [...]
2020-05-18meta-author
Properties of InGaN blue laser diodes grown on bulk GaN substrates
High-pressure growth from solution is at present the only method able to provide true bulk GaN monocrystals. In this paper, we would like to demonstrate that in spite of their small, centimeter range size, [...]