게르마늄 웨이퍼 공급

게르마늄 웨이퍼 공급

게르마늄 웨이퍼의 게르마늄 기판

No. 자료 정위. 직경 두께 폴란드어 저항 형 도펀트 평면 수상 EPD
(mm) (μm의) Ω · cm 정위 / cm2
1-100 (100) 50.8 500 ± 25 SSP 0.0138-0.02 P / 조지아 (110) ≤5000 N / A
1-100 (100) 50.8 500 SSP ≥30 N / 도핑 N / A N / A <5A
1-100 (100) 50.8 500 SSP 58.4-63.4 N / 도핑 N / A N / A N / A
1-100 (100) 50.8 500 SSP 0.1-1 P / 조지아 N / A N / A N / A
1-100 (100) 50.8 500 SSP 0.1-0.05 P / 조지아 N / A N / A N / A
1-100 (100) 50.8 1000 DSP >30 N / A (110) N / A N / A
1-100 (100) 50.8 2000 SSP N / A N / A N / A N / A N / A
1-100 (100) 50.8 4000 SSP N / A N / A N / A N / A N / A
1-100 (111) / (110) 50.8 200000 N / A 5-20 N / A N / A N / A N / A
1-100 (100) 50.8 400 SSP <0.4 N / A N / A N / A N / A
1-100 (100) / (111) 50.8 4000 ± 10 DSP N / A N / A N / A N / A N / A
1-100 (100) 50.8 350 SSP 1-10 P / 조지아 (110) ≤5000 N / A
PAMP20295 (100) 50.8 500 ± 25 SSP 2-10 P / 조지아 (110) ≤5000 N / A
1-100 (100) 50.8 500 ± 25 SSP 0.3-3 N / Sb를 (110) ≤5000 N / A
1-100 (100) 50.8 500 ± 25 SSP 0.3-3 P / 조지아 (110) ≤5000 N / A
1-100 (111) 60 1000 컷으로 >30 N / A (110) <3000 N / A
1-100 (100) 100 N / A SSP <0.019 P / 조지아 (110) <500 N / A
1-100 (100) 100 1000 ± 25 SSP ≥30 N / 도핑 N / A N / A N / A
1-100 (100) -1 ° 또는 11 ° 오프 오프 100 500 SSP 0.01-0.05 P / 조지아 N / A N / A N / A
1-100 (100) 100 500 SSP 0.01-0.05 P / 조지아 N / A N / A N / A
1-100 (100) 100 500 DSP 0.01-0.05 P / 조지아 N / A N / A N / A
1-100 (100) 100 500 SSP <0.01 P / 조지아 N / A N / A N / A
1-100 (100) 100 500 DSP <0.01 P / 조지아 N / A N / A N / A
1-100 (100) 100 500 SSP ≥35 P / 조지아 N / A N / A N / A
1-100 (100) 100 500 DSP ≥35 P / 조지아 N / A N / A N / A
1-100 (100) 100 500 SSP 0.1-0.05 P / 조지아 N / A N / A <5A
1-100 (100) 100 500 DSP 0.1-0.05 P / 조지아 N / A N / A <5A
1-100 (100) (6) (111)를 오프 ° 100 185 ± 15 DSP 0.01-0.05 N / A (110) ≤5000 <5A
1-100 (100) (6) (110)를 오프 ° 100 525 ± 25 SSP 0.01-0.04 N / A N / A N / A N / A
1-100 (100) 100 N / A N / A N / A N / A N / A N / A N / A
1-100 (100) 100 1000 ± 15 SSP ≥30 N / A (110) ≤5000 N / A
1-100 (100) 100 750 ± 25 SSP ≥30 N / A (110) ≤5000 N / A
1-100 (100) 100 500 ± 25 SSP 10-30 N / A N / A N / A N / A
1-100 (100) / (111) 100 160 DSP 0.05-0.1 P / 조지아 N / A <500 N / A
1-100 (100) / (111) 100 160 DSP 0.05-0.1 P / 조지아 N / A <4000 N / A
1-100 (100) / (111) 100 160 DSP 0.05-0.1 N / Sb를 N / A <500 N / A
1-100 (100) / (111) 100 160 DSP 0.05-0.1 N / Sb를 N / A <4000 N / A
1-100 (100) / (111) 100 190 DSP 0.05-0.1 P / 조지아 N / A <500 N / A
1-100 (100) / (111) 100 190 DSP 0.05-0.1 P / 조지아 N / A <4000 N / A
1-100 (111) 100 500 ± 25 SSP <0.4 N / Sb를 N / A N / A N / A
1-100 (100) -1 °의 (111)을 향해 오프 컷 100 175 ± 25 SSP 0.003-0.009 P / 조지아 (0-1-1) (0-11) <100 N / A
PAM210802 (100) 100 175 DSP <0.02 P N / A N / A N / A
1-100 (310)는, ± 0.1 ° 100 200 ± 15 DSP >20 N / A N / A N / A N / A
1-100 (111) 150 600-700 N / A >30 N / A (110) N / A N / A

 

Germanium wafer list here is for your reference, if you need price detail, please contact our sales team. As a Ge wafer supplier, we also offer bulk Ge wafer with sepecial orientation. Take the Ge(310) for example:

Ge wafers, PAM210611-GE

Size: 4”diameter

Intrinsic undoped

Orientation:(310)+/-0.1deg.

Resistivity:>30 ohm.cm

TTV<3um

BOW<10um

WARP<10um

SEMI Prime grade

Double side polished

One SEMI Flat

Sealed in Individual Wafer

FAQ:

Q: According to your comment below, orientation <111> is undoped, is there a difference with N type germanium wafer in transmission ?

“Normally few to use (111) on this resistivity (5-40 ohm.cm), (111)undoped(it is resistivity>40 ohm.cm) is much popular for optical application.”

A: Transmission of (111)undoped Ge wafer is slight better than n type one.

참고 :
*** As manufacturer, we also accept small quantity for researcher or foundry.

***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.

***Applications: we offer Ge wafers for various applications, like optics, epi-growth, solar cell, synchronization of IR and visible pulses in pump-probe setup and so on. Tell us your application, we will suggest you the most suitable wafer specification.

*** For solar cell application, normally user will choose Ge wafer with (100) off 6°or off 9°in 175um+/-25um thickness,EPD<500/cm2 or 5000/cm2.

자세한 내용은 이메일로 문의해 주세요.victorchan@powerwaywafer.compowerwaymaterial@gmail.com.

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