This paper reports the mechanical and electrical characteristics of Ge/Ge interfaces prepared by room-temperature surface-activated bonding (SAB). Bonded Ge/Ge wafer pairs with high bonding strength equivalent to that of the bulk material were achieved without any heat treatment. It was found that the bonding [...]
2018-11-12메타 저자
PAM XIAMEN offers 4″ CZ Prime Silicon Wafer Thickness 525 ± 25 µm.
4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm),
thickness = 525 ± 25 µm,
orientation (100)(+/-0.5°),
2-side polished,
p or n type (no matter) ,
? Ohm cm (no matter), [...]
2019-06-28메타 저자
PAM-XIAMEN can offer InGaSb material substrate, which can be used for InGaSb photodetectors, InGaSb/GaAs quantum dots (QDs), InGaSb-on-insulator for p-MOSFET, and InGaSb/InAs superlattice materials for infrared photodiodes in the very long-wavelength infrared (VLWIR) range
It can be grown on GaAs substrate, GaSb (111)A substrate and [...]
2020-05-15메타 저자
Silicon carbide (SiC) wafer are available, for more wafer information please click https://www.powerwaywafer.com/sic-wafer. The performance of SiC wafer slicing determines the processing level of subsequent thinning and polishing. Slicing is prone to cracks on the surface and subsurface of the SiC wafer, increasing the [...]
2022-08-05메타 저자
Towards the cost effective epitaxy of hillocks free CdZnTe film on (001)GaAs by close-spaced sublimation
Cost-effective epitaxy of hillocks free CdZnTe films on (001)GaAs was explored with close-spaced sublimation (CSS) technique. The orientation and film quality were studied with scanning electron microscopy (SEM), X-ray diffraction θ–2θ and Φ scans [...]
PAM-XIAMEN can offer 4” GaAs HEMT epi wafer with 2D electron gas (2DEG) and very high electron mobility of 5-7E5 cm2/V.s, please see below typical wafers of gallium arsenide with HEMT structure:
1. GaAs HEMT Epitaxial Wafer Structures
Structure 1: 4″ AlGaAs / GaAs HEMT epi wafer (PAM200416-HEMT):
HEMT [...]
