PAM XIAMEN offers 50.8mm Si wafers.
Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2063
p-type Si:B
[111]
2″
500
P/P
0.003–0.005
Prime, 2 Flats (2nd @ 45°), hard cst
PAM2064
p-type Si:B
[111]
2″
280
P/E
0.001–0.005
SEMI Prime, 1Flat, hard cst
PAM2065
p-type Si:B
[111]
2″
1000
P/E
0.001–0.005
SEMI Prime, 1Flat, hard cst
PAM2066
p-type Si:B
[111]
2″
1000
P/E
0.001–0.005
SEMI Prime, 1Flat, hard cst
PAM2067
p-type Si:B
[111] ±0.5°
2″
500
P/P
<0.01
SEMI Prime, 1Flat, [...]
2019-02-18메타 작성자
PAM XIAMEN offers ZnO/Pt/Ti coated Si wafer.
ZnO/Pt/Ti coated Si wafer ,4″x0.525mm,1sp P-type B-doped,( ZnO=150nm ,Pt=150nm Ti=20-40nm)
Silicon Wafer Specifications:
Film: ZnO/Pt/Ti thin film on Si (100) (P-type) substrate ,4″x0.525mm,1sp
ZnO=150nm, ZnO film: c-axis, medium (001) orientation
Pt/Ti film: [...]
2019-04-29메타 작성자
PAM XIAMEN offers 12 inch silicon wafers. We have all the grades including:
Prime grade 300mm silicon wafers
Test grade 300mm silicon wafers
Mechanical 300mm silicon wafers
Reclaimed 300mm silicon wafers
We can deposit the following onto our 300mm silicon wafers including:
Thermal oxide, wet and dry on 300mm silicon [...]
2019-02-20메타 작성자
PAM XIAMEN offers 2″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
50.8
N
Phos
CZ
-100
1-20
4900-5100
P/E
PRIME
50.8
N
Phos
CZ
-100
1-50
5900-6100
P/E
PRIME
50.8
N
Phos
CZ
-100
9900-10100
P/E
PRIME
50.8
N
Phos
FZ
-111
2k-5k
2000-5000
P/E
PRIME
50.8
N
Phos
CZ
-111
225-275
P/P
PRIME
50.8
N
Phos
CZ
-111
250-300
P/E
PRIME
50.8
N
Phos
FZ
-111
2000-5000
275-325
P/E
PRIME
50.8
N
Phos
CZ
-111
2900-3100
P/E
PRIME
50.8
N
Phos
CZ
-111
1-20
5900-6100
P/E
PRIME
50.8
N
Phos
CZ
-111
1-20
5950-6050
P/E
PRIME
50.8
N
Phos
FZ
-111
150-200
9900-10100
P/E
PRIME
50.8
N
Phos
CZ
-111
1-20
11900-12100
P/E
PRIME
50.8
N
Phos
CZ
-110
225-275
P/P
PRIME
50.8
N
Phos
CZ
-110
250-300
P/E
PRIME
50.8
P
Boron
CZ
(111) Off 4″ Towards (110)
.005-.02
275-325
P/E
PRIME
50.8
P
Boron
CZ
(111) Off 4″ Towards (110)
.001-.005
300-350
P/E
PRIME
50.8
P
Any
CZ
Any
Any
2400-2600
P/E
TEST
50.8
P
Any
CZ
Any
Any
4900-5100
P/E
TEST
50.8
P
Boron
CZ
-100
1-20
10-30
P/P
PRIME
50.8
P
Boron
CZ
-100
1-20
40-60
P/P
PRIME
50.8
P
Boron
CZ
-100
1-20
80-100
P/P
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in [...]
2019-02-27메타 작성자
PAM XIAMEN offers4″ CZ Prime Silicon Wafer Thickness = 200 ± 25 µm-3
4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm), thickness = 200 ± 25 µm,
orientation (100)(+/-0.5°),
2-side polished,
p or n type (no matter) ,
? Ohm cm (no matter),
Particle: 0.33µm, <qty30
ttv ≤ 10um,warp ≤30um
One [...]
2019-09-20메타 작성자
InGaP / GaAs heterojunction bipolar transistor (HBT) has become one of the highly competitive and promising high-speed solid-state devices in the current microwave and millimeter wave field due to its high reliability, low cost, and relatively mature technology. PAM-XIAMEN provide InGaP / GaAs HBT wafers. [...]
2023-07-03메타 작성자