PAM XIAMEN offers LaSrAlO4 Strontium Lanthanum Aluminate Crystal Substrates.
Main Parameters | |
Crystal structure | M4 |
Growth method | Czochralski method |
Unit cell constant | a=3.756Å c=12.63 Å |
Melt point(℃) | 1650 |
Density | 5.92(g/cm3) |
Hardness | 6-6.5(mohs) |
Dielectric constants | ε=16.8 |
Size | 10×3,10×5,10×10,15×15,20×15,20×20 |
Ф15, Ф20,Ф1″,Ф2″, Ф2.6″ | |
Thickness | 0.5mm, 1.0mm |
Polishing | Single or double |
Crystal Orientation | <001> |
redirection precision | ±0.5° |
Redirection the edge: | 2°(special in 1°) |
Angle of crystalline | Special sizes and orientations are available upon request |
Ra: | ≤5Å(5µm×5µm) |
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,
to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.