PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[111]
3″
300
P/P
0.3-0.4
SEMI Prime
p-type Si:B
[111]
3″
250
P/E
0.10-0.12
SEMI Prime
p-type Si:B
[111]
3″
300
P/E
0.03-0.04
SEMI Prime
p-type Si:B
[111]
3″
380
P/E
0.014-0.015
SEMI Prime
p-type Si:B
[111-1°]
3″
1000
P/E
0.014-0.016
SEMI Prime
p-type Si:B
[111]
3″
600
P/P
0.005-0.020
SEMI Prime
p-type Si:B
[111-3.5°]
3″
380
P/E
0.004-0.005
SEMI Prime
n-type Si:P
[510]
3″
1000
P/E/P
5-10
Prime, NO Flatst
n-type Si:P
[100]
3″
9500
P/E
15-22
SEMI Prime, Individual cst
n-type Si:P
[100]
3″
300
P/E
10-20
SEMI Prime
n-type Si:P
[100]
3″
380
P/E
10-20
SEMI Prime
n-type Si:P
[100]
3″
3000
P/E/P
10-12
Prime, NO Flats, Individual cst
n-type Si:P
[100]
3″
1000
P/E
6-10
Prime, NO Flatst
n-type Si:P
[100]
3″
1500
P/E
5-7
SEMI Prime
n-type Si:P
[100]
3″
300
P/P
1-20
SEMI Prime
n-type Si:P
[100]
3″
345
P/P
1-100
SEMI
n-type Si:P
[100]
3″
350
P/P
1-25
SEMI Prime, TTV<1μm, Empak cst
n-type [...]
2019-03-06meta-author
PAM XIAMEN offers KCl Crystal.
KCl (100), 10x10x 2.2-2.5 mm 1 Side polished
Crystal: KCl Crystal
Orientation: <100> +/-2.5 o
Size: 10x10x 2.2-2.5 mm
Polished: one side polished
Purity: 99.9%
Surface finish (RMS or Ra) : < 100A
Package: 1000 class clean plastic bag sealed
Note: KCl [...]
2019-05-07meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
100
N
Phos
CZ
-100
1-20
500-550
P/E/WTOx
100
N
Phos
CZ
-100
1-50
2900-3100
P/E
PRIME
100
N
Phos
CZ
-100
50-70
4850-5050
P/E
PRIME
100
N
Phos
CZ
-100
1-50
5900-6100
P/E
PRIME
100
N
Phos
CZ
-100
>10
9900-10100
P/P
PRIME
100
N
Phos
CZ
-111
1-10
4000-6000
P/E
PRIME
100
N
Phos
FZ
-111
> 20000
275-325
P/E
PRIME
100
N
Phos
FZ
-111
> 20000
275-325
P/P
PRIME
100
N
Phos
FZ
-111
2000-4000
275-325
P/P
PRIME
100
N
Phos
CZ
-111
450-500
P/P
PRIME
100
N
Phos
FZ
-111
> 20000
475-525
P/P
PRIME
100
N
As
CZ
-111
.001-.005
500-550
P/E
PRIME
100
N
Phos
CZ
-111
1-20
500-550
P/E
PRIME
100
N
Phos
FZ
-111
2000-4000
500-550
P/P
PRIME
100
N
Phos
CZ
-111
1-20
4800-5200
P/E
PRIME
100
N
Phos
CZ
-111
1-3
11300-11500
P/E
PRIME
100
N
Phos
CZ
-110
450-500
P/P
PRIME
100
N
Phos
CZ
-110
1-20
500-550
P/E
PRIME
100
P
Boron
CZ
(100)-4
0.01-0.02
175-225
P/P
PRIME
100
P
Boron
CZ
(100)-4
0.01-0.02
200-250
P/E
PRIME
100
P
Boron
CZ
(100)-4
0.01-0.02
325-375
P/P
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth [...]
2019-03-04meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111-5° towards[110]] ±0.25°
3″
1000
P/E
>5
SEMI Prime, in hard cassettes of 6, 6 & 7 wafers
n-type Si:P
[111-5° towards[110]] ±0.25°
3″
1300
P/E
>5
SEMI Prime, hard cst
n-type Si:P
[111-0.5° towards[110]] ±0.25°
3″
1400
E/E
>5
SEMI, LaserMark, in opened hard cast
n-type Si:P
[111-2.5°] ±0.5°
3″
380
P/E
1-3
SEMI Prime
n-type Si:P
[111] ±0.5°
3″
380
P/E
1-10
SEMI Primet
n-type Si:P
[111-3.0°] ±1°
3″
381
P/E
1-20 {1.7-5.7}
SEMI Test
n-type Si:P
[111] ±0.5°
3″
570
P/P
1-10
SEMI Primet
n-type Si:Sb
[111] ±0.5°
3″
380
P/E
0.019-0.026
SEMI Prime, in Empak cassettes [...]
2019-03-06meta-author
Semi-insulating indium phosphide (formula: InP) wafer at prime grade for sale is dark gray crystal with a bandwidth (Eg=1.35 eV) at room temperature, a dissociation pressure of 2.75MPa at a melting point, an electron mobility of 4600cm2/(V·s), and a hole mobility of 150cm2/(V·s). PAM-XIAMEN [...]
2021-08-06meta-author
PAM XIAMEN offers 3″ FZ Silicon Wafer Thickness:229-249μm.
3″ Si FZ
Diameter 76-76.6mm
Thickness 229-249μm
Resistivity 39-47Ωcm
TTV ≤10μm
RRG ≤ 7%
about 1.5mil is etched from the surfaces in order to remove any surface damage
1.5mil = 1.5*25.4= 38.1μm
1.1 Wafers are to be [...]
2019-08-22meta-author