Unintentionally doped GaN were grown on Si (111) substrates by metal organic chemical vapor deposition (MOCVD). The high-resolution X-ray diffraction (HRXRD) and Lehighton contactless sheet resistance measuring systems were employed to characterize the quality and sheet resistance (Rs) of GaN epilayer. The threading dislocation density [...]
PAM XIAMEN offers 2″CZ Prime Silicon Wafer
tem1, 100pcs
Silicon wafer:
i. Diameter: 50.8 mm ± 0.5 mm,
ii. Thickness: 275 μm ±25μm,
iii. Doping: P type
iv. Orientation: (100) ± 0.5°
v. TTV: ≤ 5 μm
vi. Bow and Warp: ≤ 20 μm
Growth: [...]
2020-03-25meta-author
PAM XIAMEN offers high-quality BaTiO3.
BaTiO3 Substrate (100)
BaTiO3 (100) 10×3 x0.5 mm, 1SP Substrate grade (with domains)
BaTiO3 (100) 5×5 x0.15 mm, 1SP Substrate grade (with domains)
BaTiO3 (100) 5×5 x0.5 mm, 1SP Substrate grade (with domains)
BaTiO3 (100) 5×5 x0.5 mm, 2SP [...]
2019-04-17meta-author
Due to the advantages of high thermal conductivity, high breakdown field strength, high saturation electron drift rate and high bonding energy, SiC material can meet the new requirements of modern electronic technology for high temperature, high frequency, high power, high voltage and radiation resistance, [...]
2022-09-16meta-author
Actually, gallium oxide(Ga2O3) is not a new technology. Studies on gallium oxide applications in the field of power semiconductors are carried out by companies and research institutions all the time. And the gallium oxide material is mainly from Japan. With the development of Ga2O3 applications requirements becoming clearer, the performance requirements for high-power devices are getting [...]
2021-04-19meta-author
Layer structure of 703nm Laser
We can offer Layer structure of 703nm Laser as follows:
Layer
Composition
Thickness (um)
Doping(cm-3)
Cap
P+- GaAs
0.2
Zn:>1e19
Cladding
p – Al0.8Ga0.2As
1
Zn:1e18
Etch stop
GaInP
0.008
Zn:1e18
Top barrier
Al0.45Ga0.55As
0.09
Undoped
Well
Al0.18Ga0.82As
0.004
Undoped
Barrier
Al0.45Ga0.55As
0.01
Undoped
Well
Al0.18Ga0.82As
0.004
Undoped
Barrier
Al0.45Ga0.55As
0.01
Undoped
Well
Al0.18Ga0.82As
0.004
Undoped
Bottom barrier
Al0.45Ga0.55As
0.09
Undoped
Cladding
n – Al0.8Ga0.2As
1.4
Si:1e18
Buffer
n – GaAs
0.5
Si:1e18
Substrate
n+ – GaAs
S :>1e18
Source:PAM-XIAMEN
For more information, please visit our website:https://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com.