PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
2″
200
P/P
FZ 500-1,000
SEMI, , in hard ccassettes of 4, 5 & 5 wafers
n-type Si:P
[100]
2″
500
P/P
FZ >200
SEMI Prime,
n-type Si:P
[100]
2″
225
P/P
FZ >100
SEMI, , Individual cst, 1 very deep scratch
n-type Si:P
[100]
2″
280
P/E
FZ 60-90
SEMI Prime
n-type Si:P
[100]
2″
150
P/P
FZ 50-110
SEMI Prime,
n-type Si:P
[100]
2″
280
P/P
FZ 2-5
SEMI Prime
n-type Si:P
[111-3.5° towards[110]] ±0.5°
2″
279 ±15
P/E
FZ >2,000
SEMI Prime
n-type Si:P
[111] ±0.5°
2″
280
P/P
FZ 2,000-4,000
SEMI Prime, TTV<5μm, Both-sides Epi-Ready
n-type Si:P
[111] ±0.5°
2″
280
P/P
FZ 2,000-4,000
SEMI Prime, TTV<5μm
n-type [...]
2019-03-07메타 저자
PAM-XIAMEN is able to supply epitaxial growth service for photonic crystal surface emitting laser (PCSEL), take the following epi structure for example. Also, we can do customized structure growth of PCSEL laser at any wavelength to meet your application needs. Photonic crystal surface-emitting lasers are an [...]
2023-07-20메타 저자
PAM XIAMEN offers 2″ Silicon Oxide Wafer
2″ Silicon Oxide Wafer
Diameter (mm): 50mm
Grade: Prime
Growth: CZ
Type/Dopant: any
Orientation: 100
Resistivity (Ohm-cm): any
Thickness (µm): 500±25μm
Tolerance (µm): any
Surface Finish: SSP
Flats: SEMI-Std.
TTV < (µm): any
Bow < (µm): any
Warp < [...]
2020-04-24메타 저자
PAM XIAMEN offers 12″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
12″
750
P/E
MCZ 1-100
TEST grade, SEMI notch, TTV<25µm
p-type Si:B
[100]
12″
775
P/P
MCZ 1-100
Prime, SEMI notch, TTV<3µm
p-type Si:B
[100]
12″
775
P/E
MCZ 1-100
Prime, SEMI notch,TTV<10µm
p-type Si:B
[100]
12″
775
P/P
0.01-0.02
Prime, SEMI notch,TTV<4µm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading [...]
2019-03-04메타 저자
Ge/SiO2 direct wafer bonding by O2-plasma pretreatment was investigated. The bonding interfaces of Ge/SiO2 low temperature direct wafer bonding were characterized by transmission electron microscopy. The perfectly atomic level Ge/SiO2 bonding was achieved after a 1500C annealing for 60 hours. The excessive O2-plasma exposure resulted in micro-crack [...]
2020-03-09메타 저자
Fabry-Perot laser (FP-LD) is the most common semiconductor laser. At present, the fabrication technology of FP-LD used in optical fiber communication has been quite mature, and the structure of double heterojunction multiple quantum wells active layer, carrier and light limited structure is widely used. [...]
2023-01-13메타 저자