PAM XIAMEN offers 4″ FZ Intrinsic Si wafer
SEMI-PRIME, FZ, 4″, Intrinsic/Undoped, <1-0-0>, >10,000 ohm-cm, 500±15um, SSP, TTV<5um, Bow<30um, Warp <30um,
Flats: 1 Flat.
Particle @0.3µm, <20count
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-18meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ 25-75
Prime
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ 25-75
Prime
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ 25-75
Prime
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ 25-75
Prime
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ 25-75
Prime
n-type Si:P
[211] ±0.5°
3″
508
P/P
FZ 25-75
Prime
n-type Si:P
[211] ±0.5°
3″
1016
P/P
FZ 25-75
Prime
n-type Si:P
[211] ±0.5°
3″
1016
P/P
FZ 25-75
Prime
n-type Si:P
[211] ±0.5°
3″
1016
P/P
FZ 25-75
SEMI TESt
n-type Si:P
[111] ±0.5°
3″
415 ±15
E/E
FZ 10,000-12,000
SEMI Prime, Lifetime>1,500μs
n-type Si:P
[111] ±0.5°
3″
415 ±15
BROKEN
FZ 10,000-12,000
Broken E/E wafers, in two pieces, Lifetime>1,500μs,
n-type Si:P
[111] ±0.5°
3″
2500
C/C
FZ 7,000-13,000
SEMI, Individual cst
n-type Si:P
[111] ±0.5°
3″
370
P/E
FZ >5,000
SEMI [...]
2019-03-06meta-author
PAM XIAMEN offers Cleaving Silicon Wafer, which is cut by multi-wire cutting technology. Here is the cleaving silicon wafer specs:
Cleaving (100) silicon wafers
Cleaving (111) silicon wafers
Here comes a question: how to cleave a silicon wafer? At present, the silicon wafer cleaving technology mostly adopts the [...]
2019-02-22meta-author
Highlights
•
The temperature-dependent strengths of CVD ZnS were obtained.
•
The thermal shock behavior of infrared window was studied by finite element method.
•
Rapid heating thermal shock tests were conducted to validate the numerical results.
Abstract
The thermal shock failure has been recognized as one of key failure modes of [...]
2018-01-24meta-author
PAM-256 multi-pixel energy spectrum imaging module is composed of one or several imaging unit. The CZT imaging unit is made of 16×16 pixel detector. With back-end ASIC, it can detect energy ranges from 10KeV~700KeV, fully satisfied γ camera and SPECT.
Direct splice: The module has a [...]
2019-04-24meta-author
PAM XIAMEN offers 2″CZ Prime Silicon Wafer-3
Silicon wafer
dia 2 inch
thickness 280 um
P type boron doped or N doped
resistivity- 1-10 ohm cm
orientation-100
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-12meta-author