PAM XIAMEN offers silicon wafers that we have with a (211) orientation.
Item
Type/Dopant
Orient.
Dia.
Thick (μm)
Surf.
Res Ωcm
Comment
PAM3037
n-type Si:Sb
[211] ±0.5°
4″
1,500 ±15
P/P
0.01-0.02
SEMI Test, 1Flat, Empak cst, Wafers can be polished for additional fee
PAM3038
n-type Si:Sb
[211] ±0.5°
4″
1600
C/C
0.01-0.02
Prime, 1Flat, Empak cst
PAM3039
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ >50
Prime, 1Flat, Empak cst
PAM3040
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ 25-75
Prime, 1Flat, Empak [...]
2019-02-22메타 작성자
PAM XIAMEN offers Conductive Ceramic Substrates.
8% YSZ Ceramic Substrate 100x100x0.25 mm, fine ground
8% YSZ Ceramic Substrate 2″x 2″x0.5 mm, one side polished
Conductive Ceramic Target (1″ Dx 0.3 mm t )
Conductive Ceramic Separator Sheets w/ optional size for Li-Air & Solid [...]
2019-04-18메타 작성자
An electrolytic etching technique has been developed which can remove p‐type GaAs substrates from thin (2–10µ) n‐type layers of or . Sodium hydroxide is used as the electrolyte, and is sprayed continually over the etching surface to prevent the build‐up of “flakes” on the p‐type surface [...]
2019-12-23메타 작성자
PAM XIAMEN offers Aluminium Crystal & Substrates (single crystal).
Aluminium Single Crystal Boule Grown by Bridgemen method.
Aluminum Single Crystal Substrate: <100>, 2″ Dia. x1.0 mm, 1 side polished
Aluminum Single Crystal Substrate: <100>, 10x10x0.5 mm, 1 side polished
Aluminum Single Crystal Substrate: <100>, [...]
2019-05-08메타 작성자
PAM XIAMEN offers MgAl2O4 Magnesium Aluminate Crystal substrate.
Magnesium aluminate (spinel) single crystals are widely used in ultrasonic and microwave material and device related epitaxial growth. We also offer polycrystalline spinel optical windows.
Crystal Structure: Cubic
Lattice parameter: a = 8.085 A
Melting point (℃): 2130℃
Density: 3.64 g/cm3
Hardness: 8 Mohs
Available orientations: <100>, <111>, <110> [...]
2019-03-14메타 작성자
M-Plane GaN Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy
M-plane GaN epilayers have been directly grown on m-plane sapphire substrates by hydride vapor phase epitaxy using a low temperature GaN nucleation layer. The m-plane GaN surface is optically smooth and mirror-like, with rms [...]
2013-04-12메타 작성자