AlN thin film, as a piezoelectric material with a wurtzite structure, has attracted much attention due to its excellent performance. However, compared with other piezoelectric materials such as Pb (ZrxTi1-x) O3 (lead zirconate titanate, PZT), pure AlN thin films exhibit poorer piezoelectric response. Doping another element in AlN is [...]
Silicon carbide (SiC) is a hot research material in the field of quantum information technology. For example, defect vacancies in SiC (composed of silicon vacancies and adjacent carbon vacancies, hereinafter referred to as VV) have many advantages of NV centers in diamond, including triple ground states and the advantage [...]
Silicon carbide (SiC) is crucial for the growth of graphene as a substrate material for epitaxial graphene. PAM-XIAMEN can offer SiC substrate for graphene growth, specification as https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html. Graphene grown on different crystal planes of SiC has different electronic properties. Therefore, selecting SiC substrates with different crystal planes to grow [...]
PAM-XIAMEN is able to supply you with P type SiC substrate, more specifications please see: https://www.powerwaywafer.com/p-type-silicon-carbide-substrate-and-igbt-devices.html. SiC single crystal has the characteristics of wide bandgap, high critical breakdown electric field, high thermal conductivity, high carrier saturation drift speed, and good stability. Among the numerous crystal forms of SiC, 4H-SiC has [...]
Single crystal AlN substrate can be provided with specifications as found in https://www.powerwaywafer.com/aln-substrate.html. AlN single crystal is the direct bandgap semiconductor material with the largest bandgap width (6.2 eV), which has excellent characteristics such as extremely high breakdown field strength, excellent thermal conductivity, stable physical and chemical properties. Moreover, AlN single [...]
PAM-XIAMEN can supply you with 4H-SiC wafers fitting your demands, specifications as found in https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html. The control of a single crystal form during the growth process of SiC crystals is a complex problem, involving the selection of multiple growth parameters and the optimization of temperature field structure, and the parameters are [...]
PAM-XIAMEN is able to supply nitrogen (N) doped silicon wafers, specifications please refer to: https://www.powerwaywafer.com/silicon-wafer. The doping of nitrogen as an impurity into silicon crystals not only has a beneficial effect on the performance of silicon wafers, but also has an important impact on the physical and electrical properties of silicon [...]
PAM-XIAMEN can supply AlN single crystal substrate, additional specification please refer to https://www.powerwaywafer.com/aln-substrate.html. The main n-type AlN candidate dopants are oxygen (O) and silicon (Si), while for p-type AlN, they are magnesium (Mg) and beryllium (Be). So far, the success rate of Mg and O doping has been very low. [...]
PAM-XIAMEN is able to offer you high-performance silicon wafers, additional wafer information you can find in https://www.powerwaywafer.com/silicon-wafer. Heat treatment refers to the heat treatment of silicon single crystals (or silicon wafers) for a certain period of time at a certain temperature and protective atmosphere, with the aim of improving their [...]
PAM-XIAMEN can supply SiC epitaxial wafers, more wafer specifications please read: https://www.powerwaywafer.com/sic-wafer/sic-epitaxy.html. Although SiC epitaxial wafers exhibit excellent characteristics in high-voltage and high current devices, there are still several types of defects that have a negative impact on the electrical performance of SiC devices. Among them, surface pits have an impact [...]
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