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UV light stabilizers market

Fabrication of ZnO nanorod/p-GaN high-brightness UV LED by microwave-assisted chemical bath deposition with Zn(OH)2–PVA nanocomposites as seed layer Chemical solution deposition is a low-temperature and possibly the lowest-cost method of growing ZnO nanorods on a GaN substrate. However, most reported methods leave an interface layer between the grown ZnO nanorods [...]

Reduction of the threading dislocation density in GaN films grown on vicinal sapphire (0001) substrates

Reduction of the threading dislocation density in GaN films grown on vicinal sapphire (0001) substrates   Structural properties of GaN films grown on vicinal sapphire (0001) substrates with various vicinal angles by plasma-assisted molecular beam epitaxy are investigated. High-resolution x-ray diffraction (HRXRD) results reveal the dramatic improvement of both tilting and [...]

Impact of GaN buffer growth conditions on photoluminescence and X-ray diffraction characteristics of MOVPE grown bulk GaN

Impact of GaN buffer growth conditions on photoluminescence and X-ray diffraction characteristics of MOVPE grown bulk GaN   Properties of metalorganic vapor phase epitaxy (MOVPE) grown GaN bulk layers with varying GaN buffer growth conditions are characterized by low-temperature (6K) photoluminescence (LT-PL) and X-ray diffraction (XRD). Full width at half-maximum (FWHM) [...]

Metastable rocksalt phase in epitaxial GaN on sapphire

Metastable rocksalt phase in epitaxial GaN on sapphire In a series of GaN epilayers grown by metalorganic chemical vapor deposition on sapphire, the GaN rocksalt structure has been detected by x-ray diffraction (XRD) and directly observed by high resolution transmission electron microscopy. The rocksalt GaN phase was found to coexist [...]

Lasing mechanism of InGaN-GaN-AlGaN MQW laser diode grown on SiC by low-pressure metal-organic vapor phase epitaxy

High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy A low-dislocation-density thick GaN layer was successfully grown using selective-area HVPE growth combined with epitaxial lateral overgrowth. The InGaN MQWsfabricated on this thick GaN layer showed superior optical properties compared with that on a sapphire substrate. Mg diffusion, [...]

Improved light output power in GaN-based vertical light-emitting diodes with p-AlInGaN/GaN superlattices

Improved light output power in GaN-based vertical light-emitting diodes with p-AlInGaN/GaN superlattices   We report the effect of p-type AlGaInN/GaN superlattices (SLs) as electron-blocking layers (EBLs) on the optical properties of vertical light-emitting diodes (VLEDs). Using p-AlGaInN/GaN SLs in VLEDs, we have achieved significant improvements in the output power and the [...]

M-Plane GaN Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy

M-Plane GaN Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy   M-plane GaN epilayers have been directly grown on m-plane sapphire substrates by hydride vapor phase epitaxy using a low temperature GaN nucleation layer. The m-plane GaN surface is optically smooth and mirror-like, with rms roughness similar to 2.0 nm [...]

Photoluminescence and Raman studies of GaN films grown by MOCVD

Photoluminescence and Raman studies of GaN films grown by MOCVD   The photoluminescence (PL) of high quality GaN epitaxial layer grown by MOCVD was investigated for various excitation power and temperatures from 8.3 to 300K. The PL at 8.3 K and with relatively low excitation power of GaN film grown on [...]