질화물 반도체 웨이퍼

질화물 반도체 웨이퍼

독립형 질화 갈륨

 

제품 번호.

유형

정위

두께

학년

마이크로 결함 밀도

표면

사용 가능 지역

 

　

N 형

 

PAM-FS-GaN50-N

2 ″ N 유형

0 ° ± 0.5 °

300 ± 25um

A / B

0 / <2 / cm2

P / P 또는 P / L

> 90 %의

 

PAM-FS-GaN45-N

dia.45mm, N 유형

0 ° ± 0.5 °

300 ± 25um

A / B

0 / <2 / cm2

P / P 또는 P / L

> 90 %의

 

PAM-FS-GaN40-N

dia.40mm, N 유형

0 ° ± 0.5 °

300 ± 25um

A / B

0 / <2 / cm2

P / P 또는 P / L

> 90 %의

 

PAM-FS-GaN38-N

dia.38mm, N 유형

0 ° ± 0.5 °

300 ± 25um

A / B

0 / <2 / cm2

P / P 또는 P / L

> 90 %의

 

PAM-FS-GaN25-N

dia.25.4mm, N 유형

0 ° ± 0.5 °

300 ± 25um

A / B

0 / <2 / cm2

P / P 또는 P / L

> 90 %의

 

PAM-FS-GaN15-N

14mm * 15mm, N 유형

0 ° ± 0.5 °

300 ± 25um

A / B

0 / <2 / cm2

P / P 또는 P / L

> 90 %의

 

PAM-FS-GaN10-N

10mm * 10.5mm, N 유형

0 ° ± 0.5 °

300 ± 25um

A / B

0 / <2 / cm2

P / P 또는 P / L

> 90 %의

 

PAM-FS-GaN5-N

5mm * 5.5mm, N 유형

0 ° ± 0.5 °

300 ± 25um

A / B

0 / <2 / cm2

P / P 또는 P / L

> 90 %의

 

 

반 절연

 

PAM-FS-GaN50-SI

2 ″ N 유형

0 ° ± 0.5 °

300 ± 25um

A / B

0 / <2 / cm2

P / P 또는 P / L

> 90 %의

 

PAM-FS-GaN45-SI

dia.45mm, N 유형

0 ° ± 0.5 °

300 ± 25um

A / B

0 / <2 / cm2

P / P 또는 P / L

> 90 %의

 

PAM-FS-GaN40-SI

dia.40mm, N 유형

0 ° ± 0.5 °

300 ± 25um

A / B

0 / <2 / cm2

P / P 또는 P / L

> 90 %의

 

PAM-FS-GaN38-SI

dia.38mm, N 유형

0 ° ± 0.5 °

300 ± 25um

A / B

0 / <2 / cm2

P / P 또는 P / L

> 90 %의

 

PAM-FS-GaN25-SI

dia.25.4mm, N 유형

0 ° ± 0.5 °

300 ± 25um

A / B

0 / <2 / cm2

P / P 또는 P / L

> 90 %의

 

PAM-FS-GaN15-SI

14mm * 15mm, N 유형

0 ° ± 0.5 °

300 ± 25um

A / B

0 / <2 / cm2

P / P 또는 P / L

> 90 %의

 

PAM-FS-GaN10-SI

10mm * 10.5mm, N 유형

0 ° ± 0.5 °

300 ± 25um

A / B

0 / <2 / cm2

P / P 또는 P / L

> 90 %의

 

PAM-FS-GaN5-SI

5mm * 5.5mm, N 유형

0 ° ± 0.5 °

300 ± 25um

A / B

0 / <2 / cm2

P / P 또는 P / L

> 90 %의

 

질화 갈륨 템플릿, AlN 템플릿, InGaN 템플릿, AlGaN 템플릿

 

제품 번호.

유형

정위

두께

학년

전위 밀도

표면

사용 가능 지역

 

PAM-76-GaN-TN

GaN 템플릿, N 유형

0 ° ± 0.5 °

20 / 30 / 40um

/

<1 × 10 ^ 8 / cm2

P / P 또는 P / L

> 90 %의

 

PAM-50-GaN-TN

GaN 템플릿, N 유형

0 ° ± 0.5 °

20 / 30 / 40um

/

<1 × 10 ^ 8 / cm2

P / P 또는 P / L

> 90 %의

 

PAM-50-GaN-TP

GaN 템플릿, P 유형

0 ° ± 0.5 °

2um

/

/

P / P 또는 P / L

> 91 %

 

PAM-50-GaN-T-SI

GaN 템플릿, 반 절연

0 ° ± 0.5 °

30 / 90um

/

<1 × 10 ^ 8 / cm2

P / P 또는 P / L

> 90 %의

 

PAM-50-AlN-T-SI

AlN 템플릿, 반 절연

0 ° ± 0.5 °

1um

/

/

P / P 또는 P / L

> 90 %의

 

PAM-50-INGaN-T-SI

InGaN 템플릿

0 ° ± 0.5 °

100 ~ 200nm

/

10 ^ 8 / cm2

P / P 또는 P / L

> 90 %의

 

PAM-50-AlGaN-T-SI

AlGaN 템플릿

0 ° ± 0.5 °

1-5um

/

*

P / P 또는 P / L

> 90 %의

 

질화 갈륨 에피 웨이퍼 (LED 웨이퍼)

 

제품 번호.

유형

정위

두께

학년

파장

표면

사용 가능 지역

 

　

N 형

 

PAM-50-GaN-EPI- 파란색 -F

/

0 ° ± 0.5 °

436um

/

445 ~ 475nm

P / L

> 90 %의

 

PAM-50-GaN-EPI-BLUE-PSS

/

0 ° ± 0.5 °

436um

/

445 ~ 475nm

P / L

> 90 %의

 

PAM-50-GaN-EPI- 그린 -F

/

0 ° ± 0.5 °

436um

/

510 ~ 530nm

P / L

> 90 %의

 

PAM-50-GaN-EPI- 그린 -PSS

/

0 ° ± 0.5 °

436um

/

510 ~ 530nm

P / L

> 90 %의

 

갈륨 질화물 UV LED

 

제품 번호.

PKG

출력 파워

순방향 전압

학년

파장

Deg.

FWHM

 

PAM-GaN-LED-UV-265

03WG / SMD / TO39

/

/

/

265nm +/- 3nm

/

10nm

 

PAM-GaN-LED-UV-280

03WG / SMD / TO39

/

6.8-7.5

/

280nm +/- 3nm

140/60

10nm

 

PAM-GaN-LED-UV-310

03WG / SMD / TO39

/

6.5-7.2

/

310nm +/- 3nm

140/60

10nm

As a GaN wafer supplier,we offer gallium semiconductor list for your reference, if you need price detail, please contact our sales team

Note:
*** As manufacturer, we also accept small quantity for researcher or foundry.

***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.

FREE STANDING GAN SINGLE CRYSTAL SUBSTRATES

GAN HEMT EPITAXIAL WAFERS (GAN EPI-WAFERS)

2018-05-23

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