PAM XIAMEN offers 2″ Diameter Wafer-2″ wafers (100).
2″ Diameter Wafer
2″ wafers (100)
2“ Undoped Ge (100)
Ge Wafer (100) Undoped, 2″ dia x 0.5 mm, 1SP, resistivities: >50 ohm-cm
Ge Wafer (100) Undoped, 2″ dia x 0.5 mm, resistivities: >50 ohm-cm, 2SP [...]
2019-04-23meta-author
Chrome photomask is available for transferring high-precision circuit design. The photomask is the pattern film in the chip manufacturing process, and is one of the determined factors for chip accuracy and quality. More specifications please see as follows:
No.1 5 inch Chrome Mask Plate (PAM180119-MASKW)
Material
Soda [...]
2021-11-05meta-author
PAM XIAMEN offers 12″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
12″
750
P/E
MCZ 1-100
TEST grade, SEMI notch, TTV<25µm
p-type Si:B
[100]
12″
775
P/P
MCZ 1-100
Prime, SEMI notch, TTV<3µm
p-type Si:B
[100]
12″
775
P/E
MCZ 1-100
Prime, SEMI notch,TTV<10µm
p-type Si:B
[100]
12″
775
P/P
0.01-0.02
Prime, SEMI notch,TTV<4µm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading [...]
2019-03-04meta-author
PAM XIAMEN offers Lead-Tungstate Crystals PbWO4.
PRODUCT DESCRIPTION FOR LEAD-TUNGSTATE CRYSTALS
Lead Tungstate (PbWO4) crystal is a scintillator which has been used as the detect material by several high energy physics devices, e.g., CMS detector in CERN. The crystal is distinguished by its fast decay time, high density [...]
2019-03-14meta-author
980 Single Mode Laser Chip (PAM200827-LD)
PAM XIAMEN offers 980 Single Mode Laser Chip
Powerwaywafer
980 Single mode laser chip property
Minimum
Typical
Maximum
Central Wavelength 969 974 979 nm
970
980
990
Output Power (mW)
300
400
500
Working Mode CW
—
—
—
Longitudinal mode Single
—
—
—
Spectrum Width
—
—
—
Emitter Width
—
—
—
Cavity Width (μm)
640
650
660
Cavity Length (μm)
4490
4500
4510
Cavity Thickness (μm)
115
125
135
Fast Axis Divergence(FWHM) 30 Deg
—
—
—
Slow Axis Divergence (FWHM) [...]
2020-09-16meta-author
In recent years, gallium nitride (GaN) is widely used in high-frequency, high-power microwave, millimeter wave devices, etc., because it has excellent performance of large band gap, high thermal conductivity, high electron saturation drift speed, and easy formation of heterostructures. At the same time, various fields have [...]
2021-04-29meta-author