PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
Intrinsic Si:-
[100-4.0°] ±0.5°
2″
400
P/E
FZ >20,000
SEMI Prime, TTV<5μm
Intrinsic Si:-
[100]
2″
400
P/E
FZ >20,000
SEMI Prime, TTV<5μm
Intrinsic Si:-
[100]
2″
200
P/P
FZ >10,000
SEMI Prime
Intrinsic Si:-
[100]
2″
350
P/P
FZ >10,000
SEMI Test, Wafers with edge chips
Intrinsic Si:-
[100]
2″
500 ±10
P/E
FZ >10,000
SEMI Prime
Intrinsic Si:-
[100]
2″
500 ±10
P/E
FZ >10,000
SEMI Prime
Intrinsic Si:-
[100]
2″
500 ±10
P/E
FZ >10,000
SEMI Prime
Intrinsic Si:-
[100]
2″
300
P/E
FZ 5,000-10,000
SEMI Prime
Intrinsic Si:-
[100]
2″
300
P/E
FZ 5,000-10,000
SEMI Prime, in hard cassettes of 2 & 5 wafers
Intrinsic Si:-
[111] ±0.5°
2″
330
P/P
FZ >20,000
SEMI
Intrinsic Si:-
[111] ±0.5°
2″
330
P/P
FZ >20,000
SEMI
Intrinsic Si:-
[111] [...]
2019-03-07메타 저자
PAM XIAMEN offers Cleaving Silicon Wafer, which is cut by multi-wire cutting technology. Here is the cleaving silicon wafer specs:
Cleaving (100) silicon wafers
Cleaving (111) silicon wafers
Here comes a question: how to cleave a silicon wafer? At present, the silicon wafer cleaving technology mostly adopts the [...]
2019-02-22메타 저자
PAM XIAMEN offers GaP Substrates (111) .
GaP Wafer, Undoped (111) 10x10x0.35 mm, 2sp
GaP Wafer, Undoped (111) 10x10x0.5 mm, 2sp
GaP Wafer, S doped (111) 2″x0.5 mm, 2sp
GaP wafer, S doped, (111) orientation, 2″ dia x 0.5mm, 1sp
GaP Wafer, undoped (111) [...]
2019-04-22메타 저자
CdZnTe monocrystalline wafers
Xiamen Powerway Advanced Material Co.,Ltd., provide CdZnTe monocrystalline wafers in different size for HgCdTe substrate epitaxy. And now PAM-XIAMEN offer specification as follows:
S.No.
Parameters
Detail
1
Undoped Cd1_xZnxTe Single crystal substrates
From wafer to wafer x =0.040± 0.005
On one wafer x =0.040± 0.005
(Twin & micro twins free [...]
PAM XIAMEN offers high-quality Au – Gold Single Crystal & Substrate.
PAM XIAMEN grows Gold single crystal along <111> direction upto 20 mm diameter by Modified bridgman method. The Gold single crystal subsrtae is cut from the Gold ingot and polished to 30A surface [...]
2019-04-16메타 저자
The demand of photodetectors fabricated on InGaAs/InP PIN wafer operating at around 1300nm~1550nm has increased significantly. So that is great news for semiconductor wafer foundries, like PAM-XIAMEN, who offer semiconductor substrate and epitaxial wafer for electronic and power devices fabrication. InGaAs wafer for PIN [...]