Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade )-2

Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade )-2

PAM XIAMEN offers Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade ).

PAM XIAMEN supplies all kinds of Silicon wafer from 1″ ~ 8″ in diameter. Particularly specializing in fabrication of Si wafer with various special size and orientation.

10×10 mm substrates

Si (100) 10x10x0.45-0.5mm, 1SP, P type B doped, R: 0.1-1 ohm-cm

Si (100) 10x10x0.5mm, 1SP, N type P doped, R:1-10 ohm-cm

Si (100) 10x10x0.5mm, 2SP, N type As doped, R: 0.001-0.005ohm-cm

Si (100) 10x10x0.5mm, 2SP, P type B doped, R: 8-32 ohm-cm

Si (100) 5x5x0.5mm, 2SP, N type As doped, R: 0.001-0.005ohm-cm

Si (100) 10x10x0.5mm, 2SP, N type P doped, R: 5.7-10.3 ohm-cm

Si (100) 10x10x0.5mm, 1SP, N type undoped, R >1000 ohm-cm

Si (100) 10x10x0.5mm, 2SP, N type undoped, R >1000 ohm-cm

Si (110) 10x10x0.5mm, 1SP, N type undoped, R: 600-2900 ohm-cm

Si (111) 10x10x0.5mm, 2SP, N-type undoped, R >1000 ohm-cm

Si (111) 10x10x0.5mm, 1SP, N type undoped, R >1000 ohm-cm

Si (111) 10x10x0.5mm, 1SP, P-type B-doped, R:1-10 ohm-cm

Si (111) 10x10x0.5mm, 2SP, P type undoped, R: 1250-1340 ohm-cm

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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