저이득 눈사태 다이오드용 Si Epi 웨이퍼 *S

The Low Gain Avalanche Diode (LGAD) is a novel semiconductor detection technology proposed by the RD50 collaboration group. Its main feature is to achieve controllable internal gain by injecting high concentration P-type doping under the PN junction of traditional N-in-P silicon pixel detectors. This type of detector has the characteristics of fast response and radiation resistance, and quickly gained attention in the field of particle physics experiments. PAM-XIAMEN can grow silicon epitaxial wafers for the fabrication of low gain avalanche detectors, taking the following structure as an example:

1. Si Epi Structure for Low Gain Avalanche Diode

2. Types of Low Gain Avalanche Diodes

LGAD의 각 유형에는 고유한 장점, 단점 및 적용 분야가 있습니다. 다양한 유형의 LGAD를 선택하면 다양한 실험 요구 사항을 충족하기 위해 시간적 해상도, 공간 해상도 및 방사선 내성 간의 균형을 찾을 수 있습니다.

3. 저이득 애벌런치 다이오드에 대한 연구 진행

In nuclear and high-energy physics applications, low gain silicon avalanche diode have been proven to perform well as particle detectors in terms of temporal resolution. Compared with silicon, 4H-SiC has a wider bandgap, better radiation resistance, higher saturation carrier velocity, and lower temperature sensitivity. Therefore, 4H-SiC LGAD is suitable for detecting minimal ionized particles (MIPs) under extreme radiation and temperature conditions. Researchers are exploring the use of new materials such as SiC semiconductor material to replace silicon and further improve the radiation resistance of LGAD. However, due to the complexity of SiC device design and production, high-performance SiC LGAD devices are still under research. PAM-XIAMEN can grow customized SiC epitaxial wafers for LGAD preparation. Send your requirements to  [email protected], 우리는 당신에게 가장 전문적인 조언을 드릴 것입니다.

연구용 또는 산업용 응용 분야에 Si 웨이퍼가 필요한지 여부에 관계없이 이메일로 문의하십시오.[email protected] 과 [email protected].