실리콘 웨이퍼

실리콘 웨이퍼

실리콘 웨이퍼

Si 웨이퍼 기판-실리콘
양 자료 정위. 직경 두께 폴란드어 저항 유형 Dopant 체크 안함 유동성 EPD
PCS (mm) (μm의) Ω · cm 　 a / cm3 센티미터2/ Vs /센티미터2
1-100 시 N / A 25.4 280 SSP 1-100 P / b N / A N / A N / A
1-100 시 N / A 25.4 280 SSP 1-100 P / b (1-200) E16 N / A N / A
1-100 시 (100) 25.4 525 N / A <0.005 N / A N / A N / A N / A
1-100 시 (100) 25.4 525 ± 25 SSP <0.005 N / A N / A N / A N / A
1-100 산화물 층을 가진 Si (100) 25.4 525 ± 25 SSP <0.005 N / A N / A N / A N / A
1-100 시 (100) 25.4 350-500 SSP 1 ~ 10 N / A N / A N / A N / A
1-100 시 (100) 25.4 400 ± 25 체육 <0.05 피/ N / A N / A N / A
1-100 시 (100) 50.4 400 ± 25 체육 <0.05 피/ N / A N / A N / A
1-100 90nm SiO2가있는 p-Si (100) 50.4 500 ± 25 체육 <0.05 피/ N / A N / A N / A
1-100 90nm SiO2가있는 n-Si (100) 50.4 500 ± 25 체육 <0.05 엔/ N / A N / A N / A
1-100 285 nm SiO2가있는 p-Si (100) 50.4 500 ± 25 체육 <0.05 엔/ N / A N / A N / A
1-100 285 nm SiO2가있는 n-Si (100) 50.4 500 ± 25 체육 <0.05 엔/ N / A N / A N / A
1-100 전극이있는 Si (100) 50.8 400 N / A <0.05 N / p 1E14-1E15 N / A N / A
1-100 시 (100) 50.8 275 SSP 1 ~ 10 N / A N / A N / A N / A
1-100 시 (100) 50.8 275 ± 25 SSP 1 ~ 10 N / p N / A N / A N / A
1-100 시 (111) 50.8 350 ± 15 SSP >10000 N / A N / A N / A N / A
1-100 시 (100) 50.8 430 ± 15 SSP 5000-8000 N / A N / A N / A N / A
1-100 시 (111) 50.8 410 ± 15 SSP 1 ~ 20 N / A N / A N / A N / A
1-100 시 (111) 50.8 400-500 SSP >5000 N / A N / A N / A N / A
1-100 시 (100) 50.8 525 ± 25 SSP 1 ~ 50 N / A N / A N / A N / A
1-100 시 (100) 50.8 500 ± 25 SSP 1 ~ 10 N P N / A N / A N / A
1-100 시 (100) 50.8 500 ± 25 P / P >700 피/ N / A N / A N / A
1-100 시 (100) 76.2 400 ± 25 체육 <0.05 피/ N / A N / A N / A
1-100 90nm SiO2가있는 p-Si (100) 76.2 500 ± 25 체육 <0.05 피/ N / A N / A N / A
1-100 90nm SiO2가있는 n-Si (100) 76.2 500 ± 25 체육 <0.05 엔/ N / A N / A N / A
1-100 285 nm SiO2가있는 p-Si (100) 76.2 500 ± 25 체육 <0.05 엔/ N / A N / A N / A
1-100 285 nm SiO2가있는 n-Si (100) 76.2 500 ± 25 체육 <0.05 엔/ N / A N / A N / A
1-100 시 (100) 100 625 SSP >10000 N / A N / A N / A N / A
1-100 시 (100) 100 525 SSP N / A N / P N / A N / A N / A
1-100 시 (100) 100 320 SSP > 2500ohm · cm P / b N / A N / A N / A
1-100 시 (100) 100 N / A SSP 10 ~ 30 N / p N / A N / A N / A
1-100 시 (100) 100 505 ± 25 SSP 0.005-0.20 N / P 도핑 N / A N / A N / A
1-100 시 (100) 100 381 SSP 0.005-0.20 N / P 도핑 N / A N / A N / A
1-100 시 (100) 100 525 DSP 1-100 N / A N / A N / A N / A
1-100 시 (100) 100 525 DSP 1-100 N / A N / A N / A N / A
1-100 시 (100) 100 625 ± 25 SSP 0.001-0.004 N / A N / A N / A N / A
1-100 산화층 3000A를 가진 Si (100) 100 675 ± 25 SSP 0.001-0.004 N / A N / A N / A N / A
1-100 시 (100) 100 625 ± 25 SSP 0.001-0.004 N / A N / A N / A N / A
1-100 시 (100) 100 N / A SSP N / A P / b N / A N / A N / A
1-100 시 (100) 100 500 ± 25 SSP 1 ~ 25 N / A N / A N / A N / A
1-100 시 (100) 100 500 SSP 1 ~ 10 피/ N / A N / A N / A
1-100 시 (100) 100 500 ± 25 체육 1-10 엔/ N / A N / A N / A
1-100 시 (100) 100 500 / 525 ± 25 P / P 1-10 엔/ N / A N / A N / A
1-100 시 (100) 100 500 / 525 ± 25 N / A N / A N / A N / A N / A N / A
1-100 시 (100) 100 500 ± 25 P / P >700 피/ N / A N / A N / A
1-100 시 (100) 150 675 ± 25 N / A  0.001-0.004 P / b N / A N / A N / A
1-100 시 (100) 150 675 ± 25 N / A  0.001-0.004 P / b N / A N / A N / A
1-100 시 (100) / (111) 150 550 ~ 650 DSP N / A N / A N / A N / A N / A
1-100 시 (100) / (111) 150 600-700 SSP <0.5 N / A N / A N / A N / A
1-100 시 (111) 150 400 ± 25 DSP <50 엔/ N / A N / A N / A
1-100 시 (100) 150 545 체육 1-3 엔/ N / A N / A N / A
1-100 시 (100) 200 725 ± 25 SSP 1 ~ 25 피/ N / A N / A N / A

실리콘 웨이퍼 공급 업체로서, 우리는 참조 용 실리콘 카바이드 목록을 제공합니다. 가격 세부 사항이 필요하면 영업 팀에 문의하십시오.

참고 :

  • 제조업체로서 연구원 또는 파운드리를 위해 소량을 허용합니다.
  • 배달 시간 : 그것은 우리가 가진 주식에 달려 있습니다, 우리가 주식이있는 경우에, 우리는 곧 당신에게 발송해서 좋습니다.
2012-03-06

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