CZ 단결정 실리콘

PAM-XIAMEN, a monocrystalline bulk silicon producer, can offer <100>, <110> and <111> monocrystalline silicon wafers with N&P dopant in 76.2~200 mm, which are grown by CZ method. The Czochralski method is a crystal growth method, referred to as the CZ method. It is integrated in a straight-tube heat system, heated by graphite resistance, melts the polysilicon contained in a high-purity quartz crucible, and then inserts the seed crystal into the surface of the melt for welding. After that, the rotating seed crystal is lowered and melted. The body is infiltrated and touched, gradually raised, and finished or pulled through the steps of necking, necking, shouldering, equal diameter control, and finishing.

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PAM-XIAMEN, a monocrystalline bulk silicon producer, can offer <100>, <110> and <111> monocrystalline silicon wafers with N&P dopant in 76.2~200 mm, which are grown by CZ method. The Czochralski method is a crystal growth method, referred to as the CZ method. It is integrated in a straight-tube heat system, heated by graphite resistance, melts the polysilicon contained in a high-purity quartz crucible, and then inserts the seed crystal into the surface of the melt for welding. After that, the rotating seed crystal is lowered and melted. The body is infiltrated and touched, gradually raised, and finished or pulled through the steps of necking, necking, shouldering, equal diameter control, and finishing.

1. Specifications for CZ Monocrystalline Silicon Wafers

유형 전도 유형 정위 직경 (mm) 전도도 (Ω • cm)
CZ N 및 P <100> <110> 및 <111> 76.2-200 1-300
MCZ N 및 P <100> <110> 및 <111> 76.2-200 1-300
헤비 도핑 N 및 P <100> <110> 및 <111> 76.2-200 0.001-1
  직경 (mm) 두께 (음)
웨이퍼 76.2-200 ≥160

 

2. Classification of CZ Monocrystalline Silicon Wafer

2.1 CZ-실리콘

무겁게 / 저농도CZ는 단결정 실리콘 is suitable for fabrication of various integrated circuits (IC), diodes, triodes, green-energy solar panel. During the monocrystalline silicon production, the special elements (such as Ga, Ge) can be added to produce the high-efficiency, radiation-resistant and anti-degenerating solar cell materials for special components.

CZ는 크게 결정을 도핑

Adopting the special doping device and CZ monocrystalline silicon wafer technology, the heavily-doped (P, Sb, As) CZ monocrystalline silicon thin film with very low resistivity can be produced, is mainly used as the lining material for epitaxial wafers, and is used to produce the special electronic devices for LSI switch power supplies, Schottky diodes and field-control high-frequency power electronic devices.

<110> Special orientation CZ-silicon

그만큼<110>의 실리콘 단결정 has the original orientation <110>, the further processing for orientation adjustment is unnecessary; the <110>monocrystalline silicon crystal structure has the perfect characteristics, and low oxygen & carbon contents, is a new solar cell material and can be used the new generation cell material.

2.2 MCZ-Monocrystalline Silicon

The magnetic-field is used in the czochralski process to produce the CZ mono-crystalline silicon wafers with the characteristics of low oxygen content and high resistivity uniformity; the MCZ규소다양한 IC를, 개별 소자 및 저산소 태양 전지용 실리콘 물질을 제조하기에 적합하다.

한 눈에 우리의 장점

1.Advanced 에피 성장 장비 및 시험 장비.

낮은 결함 밀도와 우수한 표면 거칠기와 높은 품질 2.Offer.

우리의 고객을위한 연구 팀 지원 및 기술 지원을 3.Strong

 

4 "프라임 CZ 실리콘 웨이퍼 두께 = 200 ± 25 ㎛의 1

4 "프라임 CZ 실리콘 웨이퍼 두께 = 200 ± 25 ㎛의 -2-

4 "프라임 CZ 실리콘 웨이퍼 두께 = 200 ± 25 μm의 3

4 "CZ 국무 실리콘 웨이퍼 두께 525 ± 25 μm의

4 "CZ 국무 실리콘 웨이퍼 두께 525 ± 25μm 인

4 "CZ 국무 실리콘 웨이퍼 두께 525 ± 25 μm의 2

4 "CZ 국무 실리콘 웨이퍼 두께 525 ± 25 μm의 3

4 "CZ 국무 실리콘 웨이퍼 두께 525 ± 25 μm의 4

4 "CZ 국무 실리콘 웨이퍼 두께 1500 ± 25μm 인

4 "CZ 국무 실리콘 웨이퍼 두께 200 ㎛.

8″CZ Prime Silicon Wafer

8″CZ Prime Silicon Wafer-1

8″CZ Prime Silicon Wafer-2

6″CZ Prime Silicon Wafer

6″CZ Prime Silicon Wafer-1

6″CZ Prime Silicon Wafer-2

6″CZ Prime Silicon Wafer-3

6″ CZ Si Wafer

6″ CZ Silicon Wafer

4 "CZ 프라임 실리콘 웨이퍼

4 "CZ 프라임 실리콘 웨이퍼-2

4 "CZ 프라임 실리콘 웨이퍼-3

4 "CZ 프라임 실리콘 웨이퍼

4 "CZ 프라임 실리콘 웨이퍼-2

4″CZ Prime Silicon Wafer-6

4″CZ Prime Silicon Wafer-7

4″CZ Prime Silicon Wafer-8

4″CZ Prime Silicon Wafer-9

4″CZ Prime Silicon Wafer-10

4″CZ Prime Silicon Wafer-11

4″CZ Prime Silicon Wafer-12

4″CZ Prime Silicon Wafer-13

4″CZ Prime Silicon wafer-14

4″CZ Prime Silicon wafer-15

4″CZ Prime Silicon wafer-16

2″CZ Prime Silicon Wafer

2″CZ Prime Silicon Wafer-1

2″CZ Prime Silicon Wafer-2

2″CZ Prime Silicon Wafer-3

2″CZ Prime Silicon Wafer-4

3″CZ Prime Silicon Wafer

3″CZ Prime Silicon Wafer-1

6 "CZ 프라임 웨이퍼 (1)

12 ″ 실리콘 웨이퍼 300mm TOX (Si 열 산화 웨이퍼)

12 "국무 학년 실리콘 웨이퍼

4 "CZ 에피 택셜 프라임 실리콘 웨이퍼-3

2″ Silicon Oxide Wafer

3″ Silicon Oxide Wafer

4″ Silicon Oxide Wafer

3″ CZ Si Lapped Wafer

8″ CZ Silicon Wafer SSP

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