PAM-XIAMEN can offer 780nm laser diode wafer with quantum well based on GaAs substrate. The semiconductor lasers fabricated our LD wafer are applied in the fields of laser cutting, laser coating, laser medical treatment, optical communication, infrared security and etc., which have the disadvantages [...]
2016-06-13meta-author
PAM XIAMEN offers Nd YAG Nd Doped Yttrium Aluminium Garnet Laser Crystal.
Main Specifications
dimensional tolerance:
Dia:< +/-0.025 mm ,length: < +/-0.5 mm
flatness:
λ/8 @633nm
Surface fineness:
10/5
flatness:
20 arc sec.
verticality:
5 arc min
orientation:
<111> crystalline direction,< +/-0.5°
coating film:
AR coating, HR Coating
reflect:
R<0.2%@1064, HR:R>99.8%@1064,R<5%@808nm,
clear aperture:
>95% central area
wavefront distortion:
<7mm diameter : <λ/8 per inch @ 633nm,
7mm diameter : <λ/10per inch @ 633nm
Publications related to YAG laser crystals:
[1]
J. E. Geusic et al., “Laser oscillations in Nd-doped yttrium aluminum, yttrium gallium and gadolinium garnets”, Appl. Phys. Lett. 4 (10), 182 (1964)
[2]
D. Y. Shen et al., “Highly efficient in-band pumped Er:YAG laser [...]
2019-03-15meta-author
PAM XIAMEN offers LSAT Crystal Substrates.
SPECIFICATIONS:
Growth method: Czochralski method
Crystal structure: Cubic
Lattice parameter: a = 3.868 A
Melt point (℃): 1840
Density: 6.74(g/cm3)
Hardness: 6.5(mohs)
Dielectric constants: 22
Thermal expansion: 10 x 10-6 /K
Available Size: 10×3,10×5,10×10,15×15,20×15,20×20,Ф15, Ф20,Ф1″ (1 inch),Ф2″ (2 inch), Ф2.6″ (2.6 inch). Special sizes and orientations are available upon request.
Thickness: 0.5mm, 1.0mm
Polishing: Single or double, Epi-face Ra < 0.5 [...]
2019-03-13meta-author
This paper reports the mechanical and electrical characteristics of Ge/Ge interfaces prepared by room-temperature surface-activated bonding (SAB). Bonded Ge/Ge wafer pairs with high bonding strength equivalent to that of the bulk material were achieved without any heat treatment. It was found that the bonding [...]
2018-11-12meta-author
Freestanding GaN , Wafer Specification
https://www.powerwaywafer.com/freestadning-gan-substrate.html
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing [...]
2019-03-20meta-author
SiC wafer materials have broad bandgap, high electron saturation mobility, and excellent thermal properties, which have great application prospects in high-temperature, high-frequency, and high-power devices. The surface quality of Si surface directly affects the quality of SiC epitaxial thin film and the performance of [...]
2024-03-19meta-author