InP-based three-terminal electronic devices mainly include InP-based heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs). PAM-XIAMEN can provide indium phosphide (InP) HEMT epi wafer, in which InGaAs use as the channel material and InAlAs as the barrier layer. The InP HEMT structure [...]
2022-07-22메타 저자
PAM XIAMEN offers Au coated Silicon wafer /Microscope Slides.
High quality glass, standard microscope slides coated with 100nm of gold with a 5nm Titanium adhesion layer between the glass slide surface and the gold coating. Can be used for a wide range of nanotechnology, [...]
2019-04-26메타 저자
Cubic SiC films (3C–SiC) were deposited on (111) Si substrates by a vapor–liquid–solid tri-phase growth method. In such a process a thin copper layer, which was evaporated on the Si substrate prior to the growth, was melted at high temperature as the flux and [...]
PAM-XIAMEN offers 650 RC LED Wafer. RC LED – resonant cavity light emitting diode refers to a new type of light-emitting diode structure, which can be regarded as a combination of VCSEL and LED, and have the advantages of both. Now, it is mostly [...]
2019-03-13메타 저자
PAM XIAMEN offers 6″FZ Silicon Wafer-1
Silicon wafers, per SEMI Prime, P/E
6″Ø×675±25µm
FZ p-type Si:B[110]±0.5°
Ro > 1,000 Ohmcm,
One-sidepolished, backside Alkaline etched
2 Flats
Sealed in Empak or equivalent cassette
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-11메타 저자
PAM XIAMEN offers 4″ Prime CZ Si wafer with one side sputtering Cr/Au layer thickness 10/50nm
4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm),
thickness = 100 ± 25 µm,
orientation (100)(+/-0.5°),
2-side polished,
p or n type (no matter) ,
resistivity ? Ohm cm (no matter),
Particle: 0.33µm, <qty30
ttv ≤ 10um，warp ≤30um
One side sputtering Cr/Au Layer with the thickness 10nm/50nm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-16메타 저자
