III-V 질화물 필름 증 착용 기판

III-V 질화물 필름 증 착용 기판

III-V 질화막 증 착용 기판

결정 구조 MP 밀도 GaN에 대한 격자 불일치 열 팽창 성장 기술. . & 최대 크기 표준 기판 크기 (mm)
oC g / cm3 (10-6/케이)
SiC를

(예 : 6H)

 육각형 ~2700 3.21 3.5 % 아토리. 10.3 CVD Ø2 ″ x 0.3, Ø3 ″ x0.3
a = 3.073 Å     20x20x0.3,15x15x0.3
C = 15.117 Å   Ø3“ 10x10x0.3,5x5x0.3
  subl.   1면 에피 연마
알2O3 육각형 2030 3.97 14 % 아토리. 7.5 CZ Ø50 x 0.33
a = 4.758 Å   Ø25 x 0.50
c = 12.99 Å Ø2” 10x10x0.5
    1면 또는 2면 에피 연마
LiAlO2 테트라 고날 1900 년 ~ 2.62 1.4 % 아토리. / CZ 10x10x0.5
a = 5.17 Å Ø20mm 1면 또는 2면 에피 연마
c = 6.26 Å    
LiGaO2 오르 토르. 1600 4.18 0.2 % 아토리. / CZ 10x10x0.5
a = 5.406 Å Ø20mm 1면 또는 2면 에피 연마
b = 5.012Å    
c = 6.379 Å    
MgO 큐빅 2852 3.58 3 % 아토리. 12.8 플럭스 2”x2”x 0.5mm, Ø2”x 0.5mm
a = 4.216 Å   1”x1”x 0.5mm, Ø1”x 0.5mm
  Ø2 ″ 10x10x0.5mm
1면 또는 2면 에피 연마
MgAl2O4 큐빅 2130 3.6 아토리 9 %. 7.45 CZ Ø2 ″ x 0.5
a = 8.083 Å Ø2“ 10x10x0.5
    1면 또는 2면 에피 연마
ZnO Hexag. 1975 5.605 2.2 % 아토리. 2.9 열수 20x20x0.5
a = 3.325 Å 20mm 1면 또는 2면 에피 연마
c = 5.213 Å    
질화 갈륨 육각형   6.15   5.59   10x10x0.475mm
    5x5x0.475mm
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