Free-standing Gallium Nitride
Item No.
Type
Orientation
Thickness
Grade
Micro Defect Density
Surface
Usable area
N-Type
PAM-FS-GaN50-N
2″ N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN45-N
dia.45mm,N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN40-N
dia.40mm,N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN38-N
dia.38mm,N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN25-N
dia.25.4mm,N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN15-N
14mm*15mm,N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN10-N
10mm*10.5mm,N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN5-N
5mm*5.5mm, N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
SEMI-INSULATING
PAM-FS-GaN50-SI
2″ N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN45-SI
dia.45mm,N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN40-SI
dia.40mm,N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN38-SI
dia.38mm,N [...]
Epi/Thin Film on Substrate
GaN Substrate/Template
SiO2+Si3N4 on Silicon wafer Substrate
GaAs/AlGaAs on GaAs (Si) Substrate
SiC 4H Film on 4H-SiC Substrate
AlN Thin Film Substrate
Aluminum Film Substrate
Silicon Nitride on Corning 7980 Substrate
La0.7Sr0.3MnO3 + PbZr(x)Ti(1-x)O3 on Nb(SrTiO3) substrate
Diamond on Silicon Wafer Substrate
Ag Conductive Film(Planarized silver nanowir)substrate
FTO Film on Substrates
Silicon Nitride [...]
2018-07-10메타 작성자
Silicon Wafer
Si wafer Substrate -Silicon
Quantity
Material
Orientation.
Diameter
Thickness
Polish
Resistivity
Type Dopant
Nc
Mobility
EPD
PCS
(mm)
(μm)
Ω·cm
a/cm3
cm2/Vs
/cm2
1-100
Si
N/A
25.4
280
SSP
1-100
P/b
N/A
N/A
N/A
1-100
Si
N/A
25.4
280
SSP
1-100
P/b
(1-200)E16
N/A
N/A
1-100
Si
(100)
25.4
525
N/A
<0.005
N/A
N/A
N/A
N/A
1-100
Si
(100)
25.4
525±25
SSP
<0.005
N/A
N/A
N/A
N/A
1-100
Si with Oxide layer
(100)
25.4
525±25
SSP
<0.005
N/A
N/A
N/A
N/A
1-100
Si
(100)
25.4
350-500
SSP
1~10
N/A
N/A
N/A
N/A
1-100
Si
(100)
25.4
400±25
P/E
<0.05
P/
N/A
N/A
N/A
1-100
Si
(100)
50.4
400±25
P/E
<0.05
P/
N/A
N/A
N/A
1-100
p-Si with 90 nm SiO2
(100)
50.4
500±25
P/E
<0.05
P/
N/A
N/A
N/A
1-100
n-Si with 90 nm SiO2
(100)
50.4
500±25
P/E
<0.05
N/
N/A
N/A
N/A
1-100
p-Si with 285 nm SiO2
(100)
50.4
500±25
P/E
<0.05
N/
N/A
N/A
N/A
1-100
n-Si with 285 nm SiO2
(100)
50.4
500±25
P/E
<0.05
N/
N/A
N/A
N/A
1-100
Si with electrodes
(100)
50.8
400
N/A
<0.05
N/p
1E14-1E15
N/A
N/A
1-100
Si
(100)
50.8
275
SSP
1~10
N/A
N/A
N/A
N/A
1-100
Si
(100)
50.8
275±25
SSP
1~10
N/p
N/A
N/A
N/A
1-100
Si
(111)
50.8
350±15
SSP
>10000
N/A
N/A
N/A
N/A
1-100
Si
(100)
50.8
430±15
SSP
5000-8000
N/A
N/A
N/A
N/A
1-100
Si
(111)
50.8
410±15
SSP
1~20
N/A
N/A
N/A
N/A
1-100
Si
(111)
50.8
400-500
SSP
>5000
N/A
N/A
N/A
N/A
1-100
Si
(100)
50.8
525±25
SSP
1~50
N/A
N/A
N/A
N/A
1-100
Si
(100)
50.8
500±25
SSP
1~10
N P
N/A
N/A
N/A
1-100
Si
(100)
50.8
500±25
P/P
>700
P/
N/A
N/A
N/A
1-100
Si
(100)
76.2
400±25
P/E
<0.05
P/
N/A
N/A
N/A
1-100
p-Si with 90 nm SiO2
(100)
76.2
500±25
P/E
<0.05
P/
N/A
N/A
N/A
1-100
n-Si with 90 nm SiO2
(100)
76.2
500±25
P/E
<0.05
N/
N/A
N/A
N/A
1-100
p-Si with 285 nm SiO2
(100)
76.2
500±25
P/E
<0.05
N/
N/A
N/A
N/A
1-100
n-Si with 285 nm SiO2
(100)
76.2
500±25
P/E
<0.05
N/
N/A
N/A
N/A
1-100
Si
(100)
100
625
SSP
>10000
N/A
N/A
N/A
N/A
1-100
Si
(100)
100
525
SSP
N/A
N/P
N/A
N/A
N/A
1-100
Si
(100)
100
320
SSP
>2500ohm·cm
P/b
N/A
N/A
N/A
1-100
Si
(100)
100
N/A
SSP
10~30
N/p
N/A
N/A
N/A
1-100
Si
(100)
100
505±25
SSP
0.005-0.20
N/P-doped
N/A
N/A
N/A
1-100
Si
(100)
100
381
SSP
0.005-0.20
N/P-doped
N/A
N/A
N/A
1-100
Si
(100)
100
525
DSP
1-100
N/A
N/A
N/A
N/A
1-100
Si
(100)
100
525
DSP
1-100
N/A
N/A
N/A
N/A
1-100
Si
(100)
100
625±25
SSP
0.001-0.004
N/A
N/A
N/A
N/A
1-100
Si [...]
PAM-XIAMEN offers Indium Semiconductor Wafer:InAs,InP, InSb
InAs wafer Substrate- Indium Arsenide
Quantity
Material
Orientation.
Diameter
Thickness
Polish
Resistivity
Type Dopant
Nc
Mobility
EPD
PCS
(mm)
(μm)
Ω·cm
a/cm3
cm2/Vs
/cm2
1-100
InAs
(110)
40.0
500
SSP
N/A
P
(1-9)E17
N/A
N/A
1-100
InAs
(100)
50.8
450
SSP
N/A
P
1E17/cc
N/A
< 20000
1-100
InAs
(100)
50.8
400
SSP
N/A
N/S
5E18-2E19
>6,000
<1E4
1-100
InAs
(100)
50.8
400
DSP
N/A
N/S
5E18-2E19
>6,000
<1E4
1-100
InAs
(111)B
50.8
N/A
SSP
N/A
N/S
(1-3)E18
N/A
N/A
1-100
InAs
(100)
50.8
N/A
SSP
N/A
N/Te
1E16/cc
N/A
N/A
1-100
InAs
(100)
50.8
400
DSP
N/A
P
(1-9)E18/cc
N/A
N/A
1-100
InAs
(100)
3x3x5
N/A
N/A
N/A
N/A
3E16/cc
N/A
N/A
As a InAs wafer supplier,we offer InAs wafer list for your reference, if you need price detail, please contact our sales team
3)2”InAs
Type/Dopant:N Un-doped
Orientation : <111>A ±0.5°
Thickness:500um±25um
epi-ready
Ra<=0.5nm
Carrier Concentration(cm-3):1E16~3E16
Mobility(cm -2 ):>20000
EPD(cm -2 ):<15000
SSP
5)2”InAs
Type/Dopant:N/P
Orientation :(100),
Carrier Concentration(cm-3):(5-10)E17,
Thickness:500 [...]
We provide series of grapheme 2D systems for grapheme,CNT and other 2D material growth. and offer the most efficient Chemical Vapor Deposition (CVD) system for graphene growth (is compatible for both LPCVD and APCVD growth). We also can adjust each of these standard systems [...]
2012-03-06메타 작성자
Single Crystal
CeO2 Crystal
Fe3O4 Crystal
SnO2 Crystal
Cu2O Crystal
Fe2O3 Crystal
MnO Crystal
PrScO3 Crystal Substrate
NdScO3 Crystal Substrate
NdScO3 Crystal Substrate
GdScO3 Crystal Substrate
DyScO3 Crystal Substrate
SOI Wafer
Ti Terminal SrTiO3
HOPG(highly oriented pyrolytic graphite)
ZnO/cAl2O3 Film
AIN on Sapphire Wafer
2018-07-10메타 작성자