태그-GaAs mHEMT epi 웨이퍼

MHEMT의 GaAs 에피 웨이퍼

InGaAs/InAlAs heterostructure is realized on GaAs substrate. This GaAs-based metamorphic high electron mobility transistor (mHEMT) heterostructure can reduce the stress at the interface between heterostructure and GaAs through the gradual change of In composition. Such a mHEMT structure can provide device performance that is superior to GaAs-based pHEMT and [...]