Tag - Layer structure of 703nm Laser

Layer structure of 703nm Laser

Layer structure of 703nm Laser   We can offer Layer structure of 703nm Laser as follows:   Layer Composition Thickness (um) Doping(cm-3) Cap P+- GaAs 0.2 Zn:>1e19 Cladding p – Al0.8Ga0.2As 1 Zn:1e18 Etch stop GaInP 0.008 Zn:1e18 Top barrier Al0.45Ga0.55As 0.09 Undoped Well Al0.18Ga0.82As 0.004 Undoped Barrier Al0.45Ga0.55As 0.01 Undoped Well Al0.18Ga0.82As 0.004 Undoped Barrier Al0.45Ga0.55As 0.01 Undoped Well Al0.18Ga0.82As 0.004 Undoped Bottom barrier Al0.45Ga0.55As 0.09 Undoped Cladding n – Al0.8Ga0.2As 1.4 Si:1e18 Buffer n – GaAs 0.5 Si:1e18 Substrate n+ – GaAs   S :>1e18   Source:PAM-XIAMEN   For more information, please visit our website:https://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com  or powerwaymaterial@gmail.com.