Superconductor Substrates
Crystal
Structure
M.P.
Density
Thermal Expansion
Dielectric constant
Growth Tech. & max. size
standard 1or 2 sides epi polished wafer
oC
g/ cm3
LSAT
Cubic
1840
6.74
10
22
CZ
20x20x0.5mm
(LaAlO3)0.3 -(Sr2AlTaO8)0.7
a=3.868 Å
Ø35mm
10x10x0.5mm
LaAlO3
Rhombo.
2100
6.51
9.2
24.5
CZ
Ø3″x0.5mm
a=3.790 Å
Ø3″
Ø2″x0.5mm
c=13.11 Å
Ø1″x0.5mm
10x10x0.5mm
MgO
Cubic
2852
3.58
12.8
9.8
Flux
Ø2″x0.5mm
a=4.21 Å
Ø2″
10x10x0.5mm
NdGaO3
Orthor.
1600
7.57
7.8
25
CZ
Ø2″x0.5mm
a=5.43 Å
Ø2″
10x10x0.5mm
b=5.50 Å
c=7.71 Å
SrTiO3
Cubic
2080
5.12
10.4
300
vernuil
10x10x0.5mm
a=3.90 Å
Ø30mm
SrLaAlO4
Tetrag.
1650
16.8
CZ
10x10x0.5mm
a=3.756 Å
Ø20mm
c=12.63 Å
YAlO3
Orthor.
1870
4.88
2 ~ 10
16`20
CZ
10x10x0.5mm
a=5.176 Å b=5.307 Å
Ø30mm
c=7.355 Å
YSZ
Cubic
~2500
5.8
10.3
27
Flux
Ø2″x0.5mm
a=5.125 Å
Ø2″
10x10x0.5m
2018-07-10메타 작성자
The wafer of graphene for sale from PAM-XIAMEN are Monolayer Graphene on PET film, Monolayer Graphene on SiO2/Silicon, Bilayer Graphene on SiO2/Silicon, Monolayer Graphene on Copper, and graphene wafer growth on nickel for researches and industry.
Graphene is a new semiconductor material with a single-layer two-dimensional honeycomb lattice structure piled up by carbon [...]
E-beam and thermal evaporation of metal coatings (Ti, Cr, Au, Pt, Pd, Al, Cu, Ag etc) on silicon wafers are available from PAM-XIAMEN.
Pt, Ru, Pd, Au, Ag, Co, Ti, Cu, Al, Ta, and Ni with thickness ranging from 10nm to 2.2um
Metal Sputtering includes single [...]
2019-11-27메타 작성자
Single Crystal
CeO2 Crystal
Fe3O4 Crystal
SnO2 Crystal
Cu2O Crystal
Fe2O3 Crystal
MnO Crystal
PrScO3 Crystal Substrate
NdScO3 Crystal Substrate
NdScO3 Crystal Substrate
GdScO3 Crystal Substrate
DyScO3 Crystal Substrate
SOI Wafer
Ti Terminal SrTiO3
HOPG(highly oriented pyrolytic graphite)
ZnO/cAl2O3 Film
AIN on Sapphire Wafer
2018-07-10메타 작성자
Lithium Niobate(LNOI) with Metal Electrode
There are metal electrode layers (Au, Pt, Al or other metals) between the SiO2 layer and the LN film. An electric field can be applied on the LN film between the metal electrode layer and the top electrode layer. Based on piezoelectric [...]
2018-08-22메타 작성자
Silicon Carbide List
4″ 4H Silicon Carbide
Item No.
Type
Orientation
Thickness
Grade
Micropipe Density
Surface
Usable area
N-Type
S4H-100-N-SIC-350-A
4″ 4H-N
0°/4°±0.5°
350±25um
A
<10/cm2
P/P
>90%
S4H-100-N-SIC-350-B
4″ 4H-N
0°/4°±0.5°
350±25um
B
< 30/cm2
P/P
>85%
S4H-100-N-SIC-350-D
4″ 4H-N
0°/4°±0.5°
350±25um
D
<100/cm2
P/P
>75%
S4H-100-N-SIC-370-L
4″ 4H-N
0°/4°±0.5°
370±25um
D
*
L/L
>75%
S4H-100-N-SIC-440-AC
4″ 4H-N
0°/4°±0.5°
440±25um
D
*
As-cut
>75%
S4H-100-N-SIC-C0510-AC-D
4″ 4H-N
0°/4°±0.5°
5~10mm
D
<100/cm2
As-cut
*
S4H-100-N-SIC-C1015-AC-C
4″ 4H-N
0°/4°±0.5°
5~10mm
C
<50/cm2
As-cut
*
3″ 4H Silicon Carbide
Item No.
Type
Orientation
Thickness
Grade
Micropipe Density
Surface
Usable area
N-Type
S4H-76-N-SIC-350-A
3″ 4H-N
0°/4°±0.5°
350±25um
A
<10/cm2
P/P
>90%
S4H-76-N-SIC-350-B
3″ 4H-N
0°/4°±0.5°
350±25um
B
< 30/cm2
P/P
>85%
S4H-76-N-SIC-350-D
3″ 4H-N
0°/4°±0.5°
350±25um
D
<100/cm2
P/P
>75%
S4H-76-N-SIC-370-L
3″ 4H-N
0°/4°±0.5°
370±25um
D
*
L/L
>75%
S4H-76-N-SIC-410-AC
3″ 4H-N
0°/4°±0.5°
410±25um
D
*
As-cut
>75%
S4H-76-N-SIC-C0510-AC-D
3″ 4H-N
0°/4°±0.5°
5~10mm
D
<100/cm2
As-cut
*
S4H-76-N-SIC-C1015-AC-D
3″ 4H-N
0°/4°±0.5°
10~15mm
D
<100/cm2
As-cut
*
S4H-76-N-SIC-C0510-AC-C
3″ 4H-N
0°/4°±0.5°
5~10mm
C
<50/cm2
As-cut
*
S4H-76-N-SIC-C1015-AC-C
3″ 4H-N
0°/4°±0.5°
10~15mm
C
<50/cm2
As-cut
*
SEMI-INSULATING
S4H-76-SI-SIC-350-A
3″ 4H-SI
0°/4°±0.5°
350±25um
A
<10/cm2
P/P
>90%
S4H-76-SI-SIC-350-B
3″ 4H-SI
0°/4°±0.5°
350±25um
B
< 30/cm2
P/P
>85%
S4H-76-SI-SIC-350-D
3″ 4H-SI
0°/4°±0.5°
350±25um
D
<100/cm2
P/P
>75%
2″ 4H Silicon Carbide
Item No.
Type
Orientation
Thickness
Grade
Micropipe Density
Surface
Usable area
N-Type
S4H-51-N-SIC-330-A
2″ 4H-N
0°/4°±0.5°
330±25um
A
<10/cm2
C/P
>90%
S4H-51-N-SIC-330-B
2″ 4H-N
0°/4°±0.5°
330±25um
B
< 30/cm2
C/P
>85%
S4H-51-N-SIC-330-D
2″ 4H-N
0°/4°±0.5°
330±25um
D
<100/cm2
C/P
>75%
S4H-51-N-SIC-370-L
2″ 4H-N
0°/4°±0.5°
370±25um
D
*
L/L
>75%
S4H-51-N-SIC-410-AC
2″ 4H-N
0°/4°±0.5°
410±25um
D
*
As-cut
>75%
S4H-51-N-SIC-C0510-AC-D
2″ 4H-N
0°/4°±0.5°
5~10mm
D
<100/cm2
As-cut
*
S4H-51-N-SIC-C1015-AC-D
2″ 4H-N
0°/4°±0.5°
10~15mm
D
<100/cm2
As-cut
*
S4H-51-N-SIC-C0510-AC-C
2″ 4H-N
0°/4°±0.5°
5~10mm
C
<50/cm2
As-cut
*
S4H-51-N-SIC-C1015-AC-C
2″ 4H-N
0°/4°±0.5°
10~15mm
C
<50/cm2
As-cut
*
2″ 6H Silicon Carbide
Item No.
Type
Orientation
Thickness
Grade
Micropipe Density
Surface
Usable area
N-Type
S6H-51-N-SIC-330-A
2″ 6H-N
0°/4°±0.5°
330±25um
A
<10/cm2
C/P
>90%
S6H-51-N-SIC-330-B
2″ 6H-N
0°/4°±0.5°
330±25um
B
< 30/cm2
C/P
>85%
S6H-51-N-SIC-330-D
2″ 6H-N
0°/4°±0.5°
330±25um
D
<100/cm2
C/P
>75%
S6H-51-N-SIC-370-L
2″ 6H-N
0°/4°±0.5°
370±25um
D
*
L/L
>75%
S6H-51-N-SIC-410-AC
2″ 6H-N
0°/4°±0.5°
410±25um
D
*
As-cut
>75%
S6H-51-N-SIC-C0510-AC-D
2″ 6H-N
0°/4°±0.5°
5~10mm
D
<100/cm2
As-cut
*
S6H-51-N-SIC-C1015-AC-D
2″ 6H-N
0°/4°±0.5°
10~15mm
D
<100/cm2
As-cut
*
S6H-51-N-SIC-C0510-AC-C
2″ 6H-N
0°/4°±0.5°
5~10mm
C
<50/cm2
As-cut
*
S6H-51-N-SIC-C1015-AC-C
2″ 6H-N
0°/4°±0.5°
10~15mm
C
<50/cm2
As-cut
*
SEMI-INSULATING
S6H-51-SI-SIC-330-A
2″ 6H-SI
0°/4°±0.5°
330±25um
A
<10/cm2
C/P
>90%
S6H-51-SI-SIC-330-B
2″ 6H-SI
0°/4°±0.5°
330±25um
B
< 30/cm2
C/P
>85%
S6H-51-SI-SIC-330-D
2″ 6H-SI
0°/4°±0.5°
330±25um
D
<100/cm2
C/P
>75%
S6H-51-SI-SIC-370-L
2″ 6H-SI
0°/4°±0.5°
370±25um
D
*
L/L
>75%
S6H-51-SI-SIC-410-AC
2″ 6H-SI
0°/4°±0.5°
410±25um
D
*
As-cut
>75%
S6H-51-SI-SIC-C0510-AC-D
2″ 6H-SI
0°/4°±0.5°
5~10mm
D
<100/cm2
As-cut
*
S6H-51-SI-SIC-C1015-AC-D
2″ 6H-SI
0°/4°±0.5°
10~15mm
D
<100/cm2
As-cut
*
Please see below sub-catalogue:
6H n type SiC
4H N Type SiC
4H Semi-insulating SiC
SiC Ingots
Lapped Wafers
Polishing Wafer
As a SiC wafer supplier,we offer Silicon carbide list for your reference, if you need price detail, please contact our sales team.
Note:
*** As manufacturer, we also accept small quantity for researcher or foundry.
***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.