PAM XIAMEN offers LaAlO3 Lanthanum Aluminate Crystal Substrates.
LaAlO3 single crystal substrates are commonly used for epitaxial growth of thin films such as high Tc superconductors, magnetic and ferroelectric materials. The dielectric properties of LaAlO3 crystal make it suitable for low loss microwave and dielectric resonance electronics applications. We Supplies can supply a wide range of LaAlO3 single crystals and epi-ready crystal substrates to meet customer’s specific requirements.
| Main Parameters | ||
| Crystal system | Hexagonal (room temperature) | Cube (> 435 ℃) |
| Lattice constant | Hexagonal a = 5.357A c = 13.22 A | Cubic a = 3.821 A |
| Melting point (℃) | 2080 | |
| Density | 6.52 (g/cm 3) | |
| Hardness | 6-6.5 (mohs) | |
| Thermal expansion coefficient | 9.4×10^-6 / ℃ | |
| Permittivity | ε = 21 | |
| Loss tangent (10 GHz) | ~ 3 × 10^-4 @ 300K, ~ 0.6 × 10^-4 @ 77K | |
| Color and Appearance | Based on annealing conditions, from brown-yellow to brown color. Polished substrate surface shows natural twinned domain | |
| Chemical stability | Insoluble in mineral acids at 25 ℃ and soluble in H3PO3 at> 150 ℃ | |
| Growth method | Czochralski method | |
| Size | 10×3, 10×5, 10×10, 15×15, 20×15, 20×20, other sizes available upon request | |
| Ф15, Ф20, Ф1 “, Ф2”, Ф2.6 “ | ||
| Thickness | 0.5mm, 1.0mm | |
| Polishing | Single or double side polished | |
| Crystal orientation | <100> <110> <111> | |
| Crystal orientation accuracy | ± 0.5 ° | |
| Edge orientation accuracy | 2 ° (special request up to within 1 °) | |
| Miter chip | According to specific needs, the processing of the edge orientation in a specific crystal plane inclined at an angle (tilt angle of 1 ° -45 °) of the wafer | |
| Ra: | ≤ 5Å (5μm × 5μm) epi-ready | |
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system.Test report is provided for each shipment, and each wafer are warranty.