PAM XIAMEN offers LaAlO3 Lanthanum Aluminate Crystal Substrates.

LaAlO3 single crystal substrates are commonly used for epitaxial growth of thin films such as high Tc superconductors, magnetic and ferroelectric materials. The dielectric properties of LaAlO3 crystal make it suitable for low loss microwave and dielectric resonance electronics applications. We Supplies can supply a wide range of LaAlO3 single crystals and epi-ready crystal substrates to meet customer’s specific requirements.

                                                          Main Parameters of Lanthanum Aluminate Substrates
Crystal system Hexagonal (room temperature) Cube (> 435 ℃)
Lattice constant Hexagonal a = 5.357A c = 13.22 A Cubic a = 3.821 A
Melting point (℃) 2080
Density 6.52 (g/cm 3)
Hardness 6-6.5 (mohs)
Thermal expansion coefficient 9.4×10^-6 / ℃
Permittivity ε = 21
Loss tangent (10 GHz) ~ 3 × 10^-4 @ 300K, ~ 0.6 × 10^-4 @ 77K
Color and Appearance Based on annealing conditions, from brown-yellow to brown color. Polished substrate surface shows natural twinned domain
Chemical stability Insoluble in mineral acids at 25 ℃ and soluble in H3PO3 at> 150 ℃
Growth method Czochralski method
Size 10×3, 10×5, 10×10, 15×15, 20×15, 20×20, other sizes available upon request
Ф15, Ф20, Ф1 “, Ф2”, Ф2.6 “
Thickness 0.5mm, 1.0mm
Polishing Single or double side polished
Crystal orientation <100> <110> <111>
Crystal orientation accuracy ± 0.5 °
Edge orientation accuracy 2 ° (special request up to within 1 °)
Miter chip According to specific needs, the processing of the edge orientation in a specific crystal plane inclined at an angle (tilt angle of 1 ° -45 °) of the wafer
Ra: ≤ 5Å (5μm × 5μm) epi-ready


Specification of 2” Lanthanum Aluminate Crystal Substrates

Lanthanum Aluminate (LaAl2O3) Substrate PAM190625-LA
Orientation: (100)+/-0.5deg.
Diameter: 50mm+/-0.3mm
Thickness: 0.5mm (500microns)
1 side Polished, EPI Polished
Roughness: <5A


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