LaF3 crystal

PAM XIAMEN offers LaF3 crystal.

Structure  Lattice (A) Melting Point  Density g/cm3 Hardness  Growth  Max. Xtl  Size
Trigonal a=b= 7.190 c=7.367 a=b=90o,  g=120o 1493 5.936 4.5 Bridgman  20dx 100mm

LaF3 (100)ori. 9x9x0.5mm 1sp

LaF3 (100)ori. 10x10x0.5mm 1SP

LaF3 (100)ori. 7x7x0.5mm 2sp

LaF3 6.35 mm Dia. x 1.575mm ,fine ground

LaF3 (110)ori. 6 mm Dia. x 0.5mm 1sp

LaF3 (100)ori. 10 mm Dia. x 15 mm 2sp

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

2019-05-07

Share this post

Related Posts

Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour

We have investigated the photoluminescence mapping characteristics of semi-insulating (SI) InP wafers obtained by annealing in iron phosphide ambience (FeP2-annealed). Compared with as-grown Fe-doped and undoped SI InP wafers prepared by annealing in pure phosphorus vapour (P-annealed), the FeP2-annealed SI InP wafer has been [...]

2019-11-11meta-author
Si wafer Thickness: 675 ± 25 um

PAM XIAMEN offers Si wafer Thickness: 675 ± 25 um. Si wafer Method: Cz Orientation: <111> Type: P-Type Dopant: Boron Resistivity: 0.1-13 ohm.cm Diameter: 150 ± 0.1 mm Thickness: 675 ± 25 um Chamfer Front side: Epi-ready Back side: etched BOW < 30um Warp [...]

2019-08-22meta-author
Impact of substrate off-angle on the m-plane GaN Schottky diodes

We investigated the effects of the substrate off-angle on the m-plane GaN Schottky diodes. GaN epitaxial layers were grown by metal–organic chemical vapor deposition on m-plane GaN substrates having an off-angle of 0.1, 1.1, 1.7, or 5.1° toward . The surface of the GaN epitaxial layers on [...]

2019-12-16meta-author
Ambient stability of wet chemically passivated germanium wafer for crystalline solar cells

Ambient stability of wet chemically passivated germanium wafer for crystalline solar cells Surface passivation has been recognized as a crucial step in the evaluation of minority carrier lifetime of photovoltaic materials as well as in the fabrication of high efficient solar cells. Dilute acids of [...]

2013-10-17meta-author , ,
New AlGaN/GaN HEMTs employing both a floating gate and a field plate

We designed and fabricated AlGaN/GaN high-electron-mobility transistors (HEMTs) employing both a floating gate (FG) and a field plate (FP), which increase the breakdown voltage of AlGaN/GaN HEMTs significantly without sacrificing forward electric characteristics. The electric field strength at the gate–drain region of the proposed AlGaN/GaN HEMT [...]

2018-01-10meta-author
Optical interference effect of a thick absorbing LT-GaAs layer on a Bragg reflector

Optical interference effect of a thick absorbing LT-GaAs layer on a Bragg reflector   Near-infrared reflectance spectra of 5 μm thick low-temperature (LT) GaAs films on GaAs/AlAs Bragg reflectors (BRs) have been studied by model calculations as a function of the linear absorption coefficient of the films αf. [...]

2013-12-10meta-author