Large CZT Spectrum Probe

PAM-01C2 is a hemisphere CZT based probe in a super small size. It can detect X-ray and low energy γ-ray in a high resolution.

PAM-01C2 integrated customized CZT crystal and low noise charge sensitive preamplifier circuit. It can convert X/γ-ray into exponential decay signals. Working with five-pin cable, high and low power supply and main amplifier,those signals will be direct into multi-channel pulse analyzer and then the energy spectrum will be formed.

Specification

Power 0.3W
Powered by ±12W
Output impedance 50Ω
Operating temperature -20℃-+40℃
High voltage input DC +800V~900V
Crystal type 10×10×10mm3  Asymmetry CZT detecor
Signal output Exponential decay signal, Tr<150ns
Interface Five-pins plug
Energy range 10KeV(Beryllium window)~2.6MeV
Energy resolution <3%@662KeV, Room temperature
INL (Integral Nonlinearity) 10KeV~1.3MeV   <0.5%
10KeV~2.6MeV   <1.0%
Peak drift 0℃~40℃  <0.05%/℃
-20℃~0℃  <0.2%/℃   
8 hours peak drift <0.2%
Dimension Φ30.5×73mm2
Weight 55g

 

Spectrum

 

 

 

 

 

 

Features
Portable, user friendly
High energy resolution
High Sensitivity
Room temperature working;
Long-time stable
Low noise

Applications
Homeland security
Anti-terrorism
Nuclear technology
Energy spectrum detecting
Defect detection
Food safety detecting
Environment monitoring

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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