Large CZT Spectrum Probe

PAM-01C2 is a hemisphere CZT based probe in a super small size. It can detect X-ray and low energy γ-ray in a high resolution.

PAM-01C2 integrated customized CZT crystal and low noise charge sensitive preamplifier circuit. It can convert X/γ-ray into exponential decay signals. Working with five-pin cable, high and low power supply and main amplifier，those signals will be direct into multi-channel pulse analyzer and then the energy spectrum will be formed.

large CZT spectrum probe

1. Specification of Hemisphere CZT Based Probe

Power	0.3W
Powered by	±12W
Output impedance	50Ω
Operating temperature	-20℃-+40℃
High voltage input	DC +800V~900V
Crystal type	10×10×10mm3 Asymmetry CZT detecor
Signal output	Exponential decay signal, Tr<150ns
Interface	Five-pins plug
Energy range	10KeV(Beryllium window)~2.6MeV
Energy resolution	<3%@662KeV, Room temperature
INL (Integral Nonlinearity)	10KeV~1.3MeV <0.5%
INL (Integral Nonlinearity)	10KeV~2.6MeV <1.0%
Peak drift	0℃~40℃ <0.05%/℃
Peak drift	-20℃~0℃ <0.2%/℃
8 hours peak drift	<0.2%
Dimension	Φ30.5×73mm2
Weight	55g

2. Large CZT Spectrum Probe’s Spectrum Diagram

3. CZT Spectrum Probe Features

Portable, user friendly
High energy resolution
High Sensitivity
Room temperature working;
Long-time stable
Low noise

4. Applications of CdZnTe Spectrum Probe

Homeland security
Anti-terrorism
Nuclear technology
Energy spectrum detecting
Defect detection
Food safety detecting
Environment monitoring

For more information, please contact us email at [email protected] and [email protected].

2019-04-23

Related Posts

TiO2（Rutile） substrates

PAM XIAMEN offers TiO2（Rutile） substrates. Rutile ( TiO2) single crystal is one of the most suitable materials used for spectral prisms and polarizing devices such as optical isolators and beam displacers because it has a large birefringence with a high refractive index. Compared to [...]

2019-05-20meta-author

Shortwave Infrared InGaAs Sensor

Indium gallium arsenide (InGaAs) sensors are supplied by PAM-XIAMEN, a InGaAs sensor manufacturer. Its working principle is actually the principle of shortwave infrared (SWIR). And the working principle of SWIR-based sensor is similar to that of CMOS-based sensor, converting photons into electrons. SWIR technology [...]

2021-07-15meta-author

(Invited) Strain Engineered Crack-Free GaN on Si for Integrated Vertical High Power GaN Devices with Si CMOS

The ability to grow thin GaN layers on Si substrates has led to the development of lateral high power and high-speed devices such as GaN HEMTs. These devices have already demonstrated promising performance and have been adopted for mass market. But lateral devices require [...]

2020-01-20meta-author

2″ Prime Silicon Wafer Tnickness 675 +/- 20 microns

PAM XIAMEN offers 2″ Prime Silicon Wafer Tnickness 675 +/- 20 microns. 2 inch in diameter wafers Monocrystalline silicon with insulating oxide Polishing: one-sided for microelectronics Thickness: 675 +/- 20 microns TTV <15 microns, Warping <35 microns For more information, please visit our website: [...]

2019-07-01meta-author

Photographic Film Letterpress

PAM XIAMEN offers Photographic Film Letterpress Accuracy Index Accuracy/Grade Accuracy1 Accuracy2 Line Number/Aperture Rate 400dpi/50% 350dpi/50% Dot arrangement, Dot shape 45°/60°/75°/circle 45°/60°/75°/circle Dimensional Accuracy ±0.085mm ±0.085mm Substrate Thickness 1.50mm±0.15mm 1.50mm±0.15mm Cutting Accuracy ±1mm ±1mm Main application areas: LCD-TN/STN/TFT collocated liquid drum glue, namely transfer PI directional liquid to ITO glass. LCD-TN/STN/TFT Photographic Film Letterpress For more information, please visit our website: https://www.powerwaywafer.com, send us email at [...]

2019-07-04meta-author

2″CZ Prime Silicon Wafer

PAM XIAMEN offers 2″CZ Prime Silicon Wafer tem1, 100pcs Silicon wafer: i. Diameter: 50.8 mm ± 0.5 mm, ii. Thickness: 275 μm ±25μm, iii. Doping: P type iv. Orientation: (100) ± 0.5° v. TTV: ≤ 5 μm vi. Bow and Warp: ≤ 20 μm Growth: [...]

2020-03-25meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.