Light–Output Enhancement of Nano-Roughened GaN Laser Lift-Off Light-Emitting Diodes Formed by ICP Dry Etching

Light–Output Enhancement of Nano-Roughened GaN Laser Lift-Off Light-Emitting Diodes Formed by ICP Dry Etching

In this paper, we report the fabrication and characteristics of nano-roughened GaN laser lift-off (LLO) light-emitting diodes (LEDs) with different scale surface roughness. The surface roughness of devices was controlled by inductively coupled plasma reactive ion etching. Using this fabrication method to form nano-scaled roughness, the electrical property was almost not degraded. Furthermore, the light-output power and wall-plug efficiency of LLO LED could be both significantly enhanced about two times using this simple method.

Source:IEEE

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Light–Output Enhancement of Nano-Roughened GaN Laser Lift-Off Light-Emitting Diodes Formed by ICP Dry Etching

Light–Output Enhancement of Nano-Roughened GaN Laser Lift-Off Light-Emitting Diodes Formed by ICP Dry Etching

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