780nm laser wafers

780nm laser wafers

 780nm laser wafers

Structure1:

780nm LD structures
P+ GaAs P>5E19, d=0.15μm
P- AlGaInP and undoped AlGaInP d~1.5μm
Undoped GaInAsP QW PL:765+-10nm
Undoped AlGaInP and N- AlGaInP , d~1.5μm
N GaAs buffer
N GaAs substrate N=(0.4~4)×1018 d=350~625μm (100) 10°off <111>A

Structure2:

Xiamen Powerway(PAM-XIAMEN), a leading developer and manufacturer of compound semiconductor epitaxial wafers providing 780nm AlGaInP/GaAs laser structure wafers.

LayerMaterialXY Strain tolerancePLThicknessTypeLevel
(ppm)(nm)(um) (cm-3)
8GaAs0.1P>2.00E19
7GaIn(x)P0.49+/-5000.05P
6[Al(x)Ga]In(y)P0.30.49+/-5001P
5GaIn(x)P0.49+/-5000.5U/D
4GaAs(x)P0.77770 U/D
3GaIn(x)P0.49+/-500 0.5U/D
2[Al(x)Ga]In(y)P0.30.49+/-5001N
1GaAs0.5N
0GaAs substrateN

 

Structure3:

The 780 nm Fabry-Perot (FP) laser diode (LD) epi-wafer, designed especially for the high-power characteristics, is grown by metal-organic chemical vapor deposition (MOCVD), with GaAsP quantum well as the active layer

Source:PAM-XIAMEN

For more information, please visit our website:https://www.powerwaywafer.com/, send us email at [email protected]  or [email protected].

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