780nm laser wafers

780nm laser wafers

Structure1:

780nm LD structures
P+ GaAs P>5E19, d=0.15μm
P- AlGaInP and undoped AlGaInP d~1.5μm
Undoped GaInAsP QW PL:765+-10nm
Undoped AlGaInP and N- AlGaInP , d~1.5μm
N GaAs buffer
N GaAs substrate N=(0.4~4)×1018 d=350~625μm (100) 10°off <111>A

Structure2:

Xiamen Powerway(PAM-XIAMEN), a leading developer and manufacturer of compound semiconductor epitaxial wafers providing 780nm AlGaInP/GaAs laser structure wafers.

Layer	Material	X	Y Strain tolerance		PL	Thickness	Type	Level
－	－	－	－	(ppm)	(nm)	(um)		(cm-3)
8	GaAs	－	－	－	－	0.1	P	>2.00E19
7	GaIn(x)P	0.49	－	+/-500	－	0.05	P	－
6	[Al(x)Ga]In(y)P	0.3	0.49	+/-500	－	1	P	－
5	GaIn(x)P	0.49	－	+/-500	－	0.5	U/D	－
4	GaAs(x)P	0.77	－	－	770		U/D	－
3	GaIn(x)P	0.49	－	+/-500		0.5	U/D	－
2	[Al(x)Ga]In(y)P	0.3	0.49	+/-500	－	1	N	－
1	GaAs	－	－	－	－	0.5	N	－
0	GaAs substrate	－	－	－	－	－	N	－

Structure3:

The 780 nm Fabry-Perot (FP) laser diode (LD) epi-wafer, designed especially for the high-power characteristics, is grown by metal-organic chemical vapor deposition (MOCVD), with GaAsP quantum well as the active layer

Source:PAM-XIAMEN

For more information, please visit our website:https://www.powerwaywafer.com/, send us email at [email protected] or [email protected].

2016-06-13

Related Posts

BGO BISMUTH GERMANATE BI4GE3O12 SCINTILLATION CRYSTAL CRYSTALS

PAM XIAMEN offers BGO, Bismuth germanate, Bi4Ge3O12 Scintillation Crystals. SPECIFICATIONS: Crystal structure: Cubic Lattice Parameter: a=10.518 Å Density: 7.13（g/cm3） Hardness: 5（mohs） Melt point: 1050℃ Index of refraction: 2.15 Radiation length: 1.1cm Peak of fluorescence spectra : 480nm Decay time: 300ns Relative light output（%）: 10-14 Nal（Tl） Energy resolution: 20% @511KV Crystal orientation: <001>、<110> Size（mm):Special size and orientation are available upon request Polishing: Single or double Packaging: Clean room MAIN APPLICATIONS Positron emission tomography (PET) High-energy physics Nuclear medicine Geological prospecting Gamma pulse spectroscopy BGO [...]

2019-03-11meta-author

4H Semi-insulating SiC

PAM-XIAMEN offers 4H semi-insulating SiC wafer with vanadium doped and undoped high-purity, semi-insulating, size from 2” to 6”. 1. The Price: PAM-XIAMEN offers the best price on the market for high quality SiC wafers and SiC crystal substrates. Our price matching policy ensures that you get the best [...]

2018-08-07meta-author

Au/Cr coated SiO2/Si substrate

PAM XIAMEN offers high-quality Au/Cr coated SiO2/Si substrate. Au (highly oriented polycrystalline) /Cr coated SiO2/Si substrate , 6″x0.675 mm,1sp P-type B-doped, Au(111)=150 nm, Cr=20nm Au (highly oriented polycrystalline) /Cr coated SiO2/Si substrate ,4″x0.525 mm,1sp P-type B-doped, Au(111)=50 nm, Cr=5 nm Au( highly oriented polycrystalline)/Cr [...]

2019-04-16meta-author

2″ Silicon Wafer-10

PAM XIAMEN offers 2″ Silicon Wafer.Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Commentn-type Si:P [111] 2″ 300 P/P FZ >150 SEMI Primen-type Si:P [111] 2″ 500 P/P FZ 130-150 SEMI Primen-type Si:P [111] 2″ 300 P/P FZ 125-210 SEMI Primen-type Si:P [111] 2″ 380 P/E FZ 100-300 SEMI Primen-type Si:P [111] 2″ 450 P/P FZ 100-230 Prime, NO Flatsn-type Si:P [111] ±0.5° 2″ 280 P/E FZ NTD 80-100 SEMI Prime, in hard cst {as ingot to process}n-type Si:P [111] 2″ 300 P/P FZ 70-95 SEMI Primen-type Si:P [111-1°] 2″ 300 P/E FZ 69-77 SEMI Primen-type Si:P [111] 2″ 300 P/P FZ >60 SEMI Primen-type Si:P [111] 2″ 300 P/E FZ 60-90 SEMI Primen-type Si:P [111] ±0.5° 2″ 280 P/E FZ NTD 55-75 SEMI Prime, in hard cst {as ingot [...]

2019-03-07meta-author

Optical characterization of InAs film grown on SnO2 substrate by the electrodeposition technique

Optical characterization of InAs film grown on SnO2 substrate by the electrodeposition technique Indium arsenide films have been grown by an electrodeposition process at low temperature on a tin oxide (SnO2) substrate. X-ray diffraction studies showed that the as-grown films are poorly crystallized and heat [...]

2018-03-05meta-author

Silicon Nitride Waveguide – Substrates and Services Provided

Silicon Nitride Waveguide – Substrates and Services Provided PAM XIAMEN offers Silicon Nitride Waveguide Clients fabricate SiN waveguides using contact lithography and pattern designs with waveguides with widths varying from 0.8 microns to 2.0 microns each of which has a straight reference waveguides and spiral waveguides [...]

2019-02-12meta-author

Read More
Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More
Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More
Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More
Photo Mask

PAM-XIAMEN Offers Photomasks
A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More
CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More
Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More
Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More
Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More
Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More
Photo Mask

PAM-XIAMEN Offers Photomasks
A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More
CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More
Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.