Development of a gate metal etch process for gallium arsenide wafers
The reactive ion etching of TiWN, which is used as a gate metal on gallium-arsenide device wafers, was studied in a parallel-plate, single-wafer plasma reactor operating at a frequency of 13.56 MHz. We discuss [...]
The Schottky barrier heights of Ti/Au contacts on p-type GaAs, grown on (111)A and (100) GaAs substrates by molecular beam epitaxy, have been investigated by I-V and C-V techniques. Higher barrier heights are observed for contacts on (111)A GaAs films. Comparison between our results [...]
2019-10-21meta-author
PAM XIAMEN offers YIG Epi. Film on GGG.
YIG Film ( 3 microns） on GGG Substrate, (111), 10x10x0.5mm, single side coated
YIG Film ( 3 microns） on GGG Substrate, (111), 5x5x0.5mm, single side coated
YIG Film (4-5 um, ) on both sides of GGG [...]
2019-04-29meta-author
Equipment Shortages Pushes Back Sharp’s OLED Production
Sharp might be adjusting its OLED panel production plan, and move the production plant in Taiwan to a joint venture factory with Foxconn in Japan, reported Nikkei Asian Review.
The joint venture with Foxconn is a 10th generation display [...]
2016-08-30meta-author
Multi-pixel Spectral Imaging Module
PAM-256 multi-pixel energy spectrum imaging module is composed of one or several imaging unit. The CZT imaging unit is made of 16×16 pixel detector. With back-end ASIC, it can detect energy ranges from 10KeV~700KeV, fully satisfied γcamera and SPECT.
Direct splice: The [...]
2019-04-24meta-author
PAM XIAMEN offers 4″FZ Prime Silicon Wafer-9
4″ Silicon Wafer
Orientation (100)
Thickness 525±25μm
SSP
P type, Boron doped
Resistivity>200Ωcm
Roughness<8 Angstrom
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-11meta-author
