Since more and more mobile phone manufacturers launch the gallium nitride fast charger, what is a GaN fast charger? A gallium nitride charger is that the core device of such a fast charger for smartphones, laptops and etc. adopts GaN FETs chip, which can be offered by [...]
2021-06-11meta-author
InGaN/GaN/AlGaN-based laser diodes grown on free-standing GaN substrates
The InGaN multi-quantum-well (MQW)-structure laser diode (LD) was grown on an epitaxially laterally overgrown GaN on sapphire. The lowest threshold current densities between 1.2 and 2.8 kA cm−2 were obtained when the number of InGaN well layer was [...]
PAM XIAMEN offers 6″CZ Si Wafer with low LPD
Wafer Si CZ (100)
Dia 6” x Thickness 675µm
Type p doped B
Resistivity 1-20 ohm.cm
With one flat
One Side Polished or Double Side Polished
LPD’s < 50 @ 0.2um
TTV < 25µm
Bow < 60µm
Warp < 60µm
For more information, send us email [...]
2020-06-15meta-author
Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers
Thick high quality gallium nitride (GaN) layers presenting a dislocation density reduced to 6×106 cm−2were grown by hydride vapour phase epitaxy (HVPE). Scanning electron microscopy (SEM) characterizations, X-ray double diffraction (XRD) measurements, photoluminescence and [...]
Numerical simulation of pixellated CdZnTe detector for medical radionuclide imaging application
The recent development of CdZnTe detectors has made it possible to produce CdZnTe based clinical radionuclide imagers. We therefore investigate the pixellation geometry ideal for this application using numerical simulation. These studies indicate that, for a fixed pixel [...]
PAM XIAMEN offers Single Crystals, Wafers and Crystal Substrates.
PAM XIAMEN provides both standard and customized high quality single crystals, wafers and substrates for a wide range of applications such as LED, ferroelectric, piezoelectric, electro-optical, photonics, high power electronics, and high frequency power devices, just to name [...]
2019-03-12meta-author
