The silicon carbide crystal most commonly used as a semiconductor material is 4H-SiC wafer. However, silicon carbide crystals have multiple types. Once the conditions are not well controlled in the process of the silicon carbide crystal growth, the resulting silicon carbide crystal structure may be 3C, 6H, 15R, etc., [...]
2021-04-08meta-author
Highlights
•Effects of atomic step width on the removal of sapphire and SiC wafers are studied.
•The reason of effects of step width on the removal and the model are discussed.
•CMP removal model of hexagonal wafer to obtain atomically smooth surface is proposed.
•The variations of atomic [...]
2015-10-28meta-author
PAM XIAMEN offers GD3GA5O12 NEODYNIUM DOPED GADOLINIUM GALLIUM GARNET CRYSTALS SUBSTRATES.
Nd:GGG (neodymium doped gadolinium gallium garnet)
Chemical formula: Nd:Gd3Ga5O12
Nd:GGG single crystal has excellent properties, such as high mechanical strength, chemical stability, thermal conductivity and thermal capacity, wide absorption bands at around 808 nm and long [...]
2019-03-12meta-author
PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade.
Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and [...]
2019-05-20meta-author
PAM XIAMEN offers Silicon Block size 5x20mm
Si pieces
Size: 5x20mm, thickness 1mm
FZ
R>5000 ohm.cm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-04-17meta-author
The SiC substrate and SiC homoepitaxy from PAM-XIAMEN can be provided for the fabrication of MOSFET devices. Silicon carbide (SiC) MOSFET structure is mainly manufactured by imitating the process of Si MOSFET structure. In terms of configuration, MOSFET structures are generally divided into two [...]
2022-04-11meta-author