LD Bare Bar for [email protected] 2.5mm

LD Bare Bar for [email protected] 2.5mm

PAM XIAMEN offers LD Bare Bar for [email protected] 2.5mm.

Brand: PAM-XIAMEN
Wavelength: 780nm
Filling Factor: 38%
Output Power: 80W
Cavity Length:2.5mm

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

2019-05-09

Share this post

Related Posts

GaN substrate

What we provide: Item undoped N- Si doped N+ Semi-insulating P+ Freestanding GaN substrate yes yes yes GaN on sapphire yes yes yes yes InGaN on sapphire yes *** AlN on sapphire yes LED wafer (p+GaN/MOW/N+GaN/N-AlGaN/N+GaN/N-GaN/sapphire) Freestanding GaN substrate/GaN on sapphire/LED wafer:   For specifications of Freestanding GaN substrate/GaN on sapphire/LED wafer, please view Gallium Nitride wafer: http://www.qualitymaterial.net/products_7.html   InGaN on Sapphire:   For specification of InGaN on sapphire template, pleas view InGaN substrate: https://www.powerwaywafer.com/InGaN-Substrates.html   AlN on [...]

2019-09-24meta-author
X-ray Photon Counting Imaging System

PAM-128 is a test system based on CZT photon counting array detector. It integrates four multi-pixel photon counting module and a thermal control system. The energy it can test ranges from 20~160KeV. Its testing resolution is 1.5lp/mm. And it support multi-energy-region test. It can [...]

2019-04-24meta-author
Cu Coated Silicon

PAM XIAMEN offers Cu Coated Silicon. Cu Film on Silicon Wafer, 4″ , 400 nm Thick, – Cu-Ti on Si-4-400nm Cu Film on Ta/Silicon Wafer, 4″ , 100 nm Thick, – Cu-Ta-Si-4-100nm Cu Film on Ta/thermal oxide/Silicon Wafer, 4″ , 400 nm Thick, – [...]

2019-04-26meta-author
Computer modeling of surface interactions and contaminant transport in microstructures during the rinsing of patterned semiconductor wafers

Computer modeling of surface interactions and contamin Highlights • Dynamics of contaminant removal from the surface of micro/nanotrench is simulated. • The trench is rectangular and made of one or two different materials. • Various diffusivities and surface characteristics are considered in the model. • In multimaterial trench, cleaning dynamics strongly depends on [...]

2014-08-10meta-author , ,
Freestanding GaN Substrate

Product Specifications PAM XIAMEN offers Freestanding GaN Substrate 2″GaN Free-standing Substrate Item PAM-FS-GaN50-N PAM-FS-GaN50-SI Conduction Type N-type Semi-insulating Size 2″(50.8)+/-1mm Thickness 260+/-20um Orientation C-axis(0001)+/-0.5° Primary Flat Location (1-100)+/-0.5° Primary Flat Length 16+/-1mm Secondary Flat Location (11-20)+/-3° Secondary Flat Length 8+/-1mm Resistivity(300K) <0.5Ω·cm >10^6Ω·cm Dislocation Density <5×10^6cm-2 Marco Defect Density A grade<=2cm-2 B grade>2cm-2 TTV <=15um BOW <=20um Surface Finish Front Surface:Ra<0.2nm.Epi-ready polished Back Surface:1.Fine ground 2.Rough grinded ≥ 90 % Usable Area           1.5″GaN Free-standing Substrate Item PAM-FS-GaN50-N PAM-FS-GaN50-SI Conduction Type N-type Semi-insulating Size 1.5″(38.1)+/-0.5mm Thickness 260+/-20um Orientation C-axis(0001)+/-0.5° Primary Flat Location (1-100)+/-0.5° Primary Flat Length 12+/-1mm Secondary Flat Location (11-20)+/-3° Secondary Flat Length 6+/-1mm Resistivity(300K) <0.5Ω·cm >10^6Ω·cm Dislocation [...]

2019-03-15meta-author
Zirconium Substrate & Foil ( Polycrystalline )

PAM XIAMEN offers Zirconium Substrate & Foil ( Polycrystalline ). Zr – Polycrystalline Substrate: 10 x 10 x0.5 mm, One sides polished Polycrystallline  Zr substrate Purity:                          99.5% Density:    6.52 g/cm3 Melting Point:    1855ºC Average Grain Size:      10~50 Microns  ( No annealling ) Substrate dimension:     10 x 10 x0.5 [...]

2019-05-21meta-author