LD Bare Bar for 780nm@cavity 2.5mm

Control of spatial distribution of As clusters in LT GaAs by indium delta doping

Energy resolution report

Energy resolution report A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact [...]

ZnO (Undoped,) crystal

PAM XIAMEN offers ZnO (Undoped,) crystal. PAM XIAMEN’s ZnO crystal is grown by hydrothermal method under high pressure. ZnO Substrates — C plate ZnO (0001) 5x5x0.5mm, O-face 1SP – ZOZ050505SO ZnO (0001) 1/4″x1/4″x0.5mm,1sp ZnO (0001) 10x10x0.5mm, 1sp Zn-Face Polished ZnO (0001) 5x5x0.2mm, 2sp ZnO [...]

Single crystal LiAlO2

PAM XIAMEN offers Single crystal LiAlO2. LiAlO2 is a potential substrate for III-V nitride thin films due to its excellent lattice mismatch to GaN ( <1.4 % at <100> ), chemical stability at high temperature and cost effective than ZnO. LiAlO2 crystal can replace [...]

GaN on Sapphire for Power

PAM XIAMEN offers GaN on Sapphire for Power. 1.1 GaN HEMT Structure on Sapphire for Power Application Wafer size 2”, 3”, 4”, 6” AlGaN/GaN HEMT structure Refer 1.2 Carrier density 6E12~2E13 cm2 Hall mobility / XRD(102)FWHM ~arc.sec XRD(002)FWHM ~arc.sec Sheet Resistivity / AFM RMS (nm）of 5x5um2 <0.25nm Bow(um) <=35um Edge exclusion  <2mm SiN passivation layer  0~30nm Al composition 20-30% In composition 17% for InAlN GaN cap / AlGaN/(In)AlN barrier / AlN interlayer / GaN channel / C [...]

3″ Silicon Wafer-12

PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [100] 3″ 1800 P/P 1-5 SEMI Prime, Individual cst n-type Si:P [100] 3″ 5000 P/E 1-30 Prime, NO Flats, Individual cst n-type Si:Sb [100] 3″ 800 P/E 0.022-0.028 SEMI Prime n-type Si:Sb [100] 3″ 380 P/E 0.021-0.023 SEMI Prime n-type Si:Sb [100] 3″ 500 P/E 0.021-0.022 SEMI Prime n-type Si:As [100] 3″ 1000 P/E 0.001-0.005 SEMI Prime n-type Si:P [211] 3″ 450 P/P 50-65 SEMI Prime n-type Si:P [111-4°] 3″ 250 P/E 50-220 Prime, NO Flatst n-type Si:P [111] 3″ 10000 P/E 20-60 SEMI Prime, Individual cst n-type Si:P [111-3°] 3″ 380 P/E 19-25 SEMI Prime n-type Si:P [111-0.5° towards[110]] ±0.25° 3″ 1400 P/E >5 SEMI Prime, hard cst, LaserMark n-type Si:P [111] 3″ 6000 P/E 5-10 SEMI Prime, Individual cst n-type Si:P [111] 3″ 525 P/E 4.5-5.0 SEMI Prime n-type Si:P [111] 3″ 500 P/P 4-6 Prime, NO [...]